STD10P6F6, MOSFET P-Ch 60V 0.15Ohm 10A STripFET VI DeepGat
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Описание
Semiconductors\Discrete Semiconductors\Transistors\MOSFET
Описание Транзистор P-МОП, полевой, -60В, -7,2А, 35Вт, DPAK Характеристики | Категория | Транзистор |
| Тип | полевой |
| Вид | MOSFET |
Технические параметры
| Brand: | STMicroelectronics |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 2500 |
| Fall Time: | 10 ns |
| Id - Continuous Drain Current: | 10 A |
| Manufacturer: | STMicroelectronics |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | TO-252-3 |
| Pd - Power Dissipation: | 35 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 6.4 nC |
| Rds On - Drain-Source Resistance: | 160 mOhms |
| Rise Time: | 7 ns |
| Series: | STD10P6F6 |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | STripFET |
| Transistor Polarity: | P-Channel |
| Transistor Type: | 1 P-Channel |
| Typical Turn-Off Delay Time: | 14 ns |
| Typical Turn-On Delay Time: | 64 ns |
| Vds - Drain-Source Breakdown Voltage: | 60 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 2 V |
| Channel Mode | Enhancement |
| Channel Type | P |
| Forward Diode Voltage | 1.1V |
| Maximum Continuous Drain Current | 10 A |
| Maximum Drain Source Resistance | 160 mΩ |
| Maximum Drain Source Voltage | 60 V |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Maximum Gate Threshold Voltage | 4V |
| Maximum Operating Temperature | +175 °C |
| Maximum Power Dissipation | 30 W |
| Minimum Gate Threshold Voltage | 2V |
| Mounting Type | Surface Mount |
| Number of Elements per Chip | 1 |
| Package Type | DPAK(TO-252) |
| Pin Count | 3 |
| Series | STripFET |
| Transistor Configuration | Single |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 6.4 nC @ 10 V |
| Width | 7.45mm |
| Automotive | No |
| Configuration | Single |
| ECCN (US) | EAR99 |
| EU RoHS | Compliant with Exemption |
| Lead Shape | Gull-wing |
| Maximum Continuous Drain Current (A) | 10 |
| Maximum Diode Forward Voltage (V) | 1.1 |
| Maximum Drain Source Resistance (mOhm) | 160@10V |
| Maximum Drain Source Voltage (V) | 60 |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Maximum Gate Source Voltage (V) | ±20 |
| Maximum Gate Threshold Voltage (V) | 4 |
| Maximum IDSS (uA) | 1 |
| Maximum Operating Temperature (°C) | 175 |
| Maximum Positive Gate Source Voltage (V) | 20 |
| Maximum Power Dissipation (mW) | 35000 |
| Minimum Operating Temperature (°C) | -55 |
| Mounting | Surface Mount |
| Operating Junction Temperature (°C) | 175 |
| Packaging | Tape and Reel |
| Part Status | Active |
| PCB changed | 2 |
| PPAP | No |
| Process Technology | STripFET |
| Product Category | Power MOSFET |
| Standard Package Name | TO-252 |
| Supplier Package | DPAK |
| Supplier Temperature Grade | Industrial |
| Tab | Tab |
| Typical Fall Time (ns) | 3.7 |
| Typical Gate Charge @ 10V (nC) | 6.4 |
| Typical Gate Charge @ Vgs (nC) | 6.4@10V |
| Typical Input Capacitance @ Vds (pF) | 340@48V |
| Typical Rise Time (ns) | 5.3 |
| Typical Turn-Off Delay Time (ns) | 14 |
| Typical Turn-On Delay Time (ns) | 64 |
| Вес, г | 0.33 |
Техническая документация
Datasheet
pdf, 1680 КБ
Datasheet
pdf, 1181 КБ
Datasheet
pdf, 1201 КБ
Datasheet
pdf, 1216 КБ
Datasheet STD10P6F6
pdf, 1185 КБ
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
Сроки доставки
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