STD11N60DM2, MOSFET N-channel 600 V, 370 mOhm typ 10 A MDmesh DM2 Power MOSFET
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см. техническую документацию
см. техническую документацию
4025 шт., срок 7-9 недель
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Описание
Semiconductors\Discrete Semiconductors\Transistors\MOSFET
MDmesh™ DM2 Power MOSFETsSTMicroelectronics MDmesh™ DM2 Power MOSFETs are silicon-based MOSFETs with a fast recovery intrinsic diode optimized for ZVS phase-shift bridge topologies. STMicroelectronics MDmesh DM2 MOSFETS feature a very low recovery charge and time (Q rr, t rr ) and shows 20% lower R DS(on) compared to the previous generation. High dV/dt ruggedness (40V/ns) ensures improved system reliability.
Технические параметры
| Brand: | STMicroelectronics |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 2500 |
| Fall Time: | 9.5 ns |
| Id - Continuous Drain Current: | 10 A |
| Manufacturer: | STMicroelectronics |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | TO-252-3 |
| Pd - Power Dissipation: | 110 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 16.5 nC |
| Rds On - Drain-Source Resistance: | 370 mOhms |
| Rise Time: | 6.3 ns |
| Series: | STD11N60DM2 |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | MDmesh |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 31 ns |
| Typical Turn-On Delay Time: | 11.7 ns |
| Vds - Drain-Source Breakdown Voltage: | 600 V |
| Vgs - Gate-Source Voltage: | -25 V, +25 V |
| Vgs th - Gate-Source Threshold Voltage: | 3 V |
| Channel Mode | Enhancement |
| Channel Type | N |
| Forward Diode Voltage | 1.6V |
| Maximum Continuous Drain Current | 10 A |
| Maximum Drain Source Resistance | 420 mΩ |
| Maximum Gate Source Voltage | ±25 V |
| Maximum Gate Threshold Voltage | 5V |
| Maximum Operating Temperature | +150 °C |
| Maximum Power Dissipation | 110 W |
| Minimum Gate Threshold Voltage | 4V |
| Minimum Operating Temperature | -55 °C |
| Mounting Type | Surface Mount |
| Number of Elements per Chip | 1 |
| Package Type | DPAK(TO-252) |
| Pin Count | 3 |
| Transistor Configuration | Single |
| Typical Gate Charge @ Vgs | 16.5 nC @ 10 V |
| Width | 6.2mm |
| Вес, г | 0.33 |
Техническая документация
Datasheet
pdf, 520 КБ
Datasheet STD11N60DM2
pdf, 816 КБ
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
Сроки доставки
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