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STD120N4LF6, MOSFET N-Ch 40V 3.1 mOhm 80A STripFET VI Deep

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3102 шт., срок 7-9 недель

570 руб.

от 10 шт. — 450 руб.

от 100 шт. — 335 руб.

от 250 шт. — 300.37 руб.

Добавить в корзину 1 шт. на сумму 570 руб.

Номенклатурный номер: 8004827910

Артикул: STD120N4LF6

Бренд: STMicroelectronics

Описание

Semiconductors\Discrete Semiconductors\Transistors\MOSFET

STripFET Power MOSFETs

STMIcroelectronics STripFET™ Power MOSFETs are enhancement-mode MOSFETs that benefit from the latest refinement of the STMicroelectronics proprietary STripFET technology with a new gate structure. The resulting STripFET Power MOSFET exhibits the high current and low R DS(on) required by automotive and industrial switching applications such as motor control, uninterruptible power supplies (UPS), DC/DC converters, induction heater vaporizers, and solar. STMicroelectronics STripFET Power MOSFETs have a very low switching gate charge, high avalanche ruggedness, low gate drive power losses, and high power density.

Технические параметры

Brand:	STMicroelectronics
Channel Mode:	Enhancement
Configuration:	Single
Factory Pack Quantity: Factory Pack Quantity:	2500
Id - Continuous Drain Current:	80 A
Manufacturer:	STMicroelectronics
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	SMD/SMT
Number of Channels:	1 Channel
Package / Case:	TO-252-3
Pd - Power Dissipation:	110 W
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	80 nC
Qualification:	AEC-Q101
Rds On - Drain-Source Resistance:	3.6 mOhms
Series:	STD120N4LF6
Subcategory:	MOSFETs
Technology:	Si
Tradename:	STripFET
Transistor Polarity:	N-Channel
Transistor Type:	1 N-Channel
Vds - Drain-Source Breakdown Voltage:	40 V
Vgs - Gate-Source Voltage:	-20 V, +20 V
Vgs th - Gate-Source Threshold Voltage:	3 V
Вес, г	0.33