Главная › Электронные компоненты › Транзисторы › Полевые (FETs, MOSFETs) › ST Microelectronics › STD12N50M2, MOSFET N-channel 500 V ...

STD12N50M2, MOSFET N-channel 500 V, 0.325 Ohm typ 10 A MDmesh M2 Power MOSFET

Изображения служат только для ознакомления,
см. техническую документацию

910 шт., срок 7-9 недель

450 руб.

от 10 шт. — 350 руб.

от 100 шт. — 255 руб.

от 500 шт. — 201.89 руб.

Добавить в корзину 1 шт. на сумму 450 руб.

Альтернативные предложения1

Номенклатурный номер: 8004827912

Артикул: STD12N50M2

Бренд: STMicroelectronics

Описание

Semiconductors\Discrete Semiconductors\Transistors\MOSFET

MDmesh™ II Power MOSFETs

STMicroelectronics 600 and 650V MDmesh™ M2 series of super-junction Power MOSFETs are optimized for soft-switching applications (LLC resonant power supplies) thanks to the optimized trade-off between R DS(on), gate charge (Qg) and intrinsic capacitances (Ciss, Coss). They also are suitable for PFC applications, especially at light loads.

Технические параметры

Brand:	STMicroelectronics
Channel Mode:	Enhancement
Configuration:	Single
Factory Pack Quantity: Factory Pack Quantity:	2500
Fall Time:	34.5 ns
Id - Continuous Drain Current:	10 A
Manufacturer:	STMicroelectronics
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	SMD/SMT
Number of Channels:	1 Channel
Package / Case:	TO-252-3
Pd - Power Dissipation:	85 W
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	15 nC
Rds On - Drain-Source Resistance:	325 mOhms
Rise Time:	10.5 ns
Series:	STD12N50M2
Subcategory:	MOSFETs
Technology:	Si
Tradename:	MDmesh
Transistor Polarity:	N-Channel
Typical Turn-Off Delay Time:	8 ns
Typical Turn-On Delay Time:	13.5 ns
Vds - Drain-Source Breakdown Voltage:	500 V
Vgs - Gate-Source Voltage:	-30 V, +30 V
Vgs th - Gate-Source Threshold Voltage:	2 V
Automotive	No
Channel Mode	Enhancement
Channel Type	N
Configuration	Single
ECCN (US)	EAR99
EU RoHS	Compliant with Exemption
Lead Shape	Gull-wing
Maximum Continuous Drain Current (A)	10
Maximum Drain Source Resistance (mOhm)	380@10V
Maximum Drain Source Voltage (V)	500
Maximum Gate Source Leakage Current (nA)	10000
Maximum Gate Source Voltage (V)	±30
Maximum Gate Threshold Voltage (V)	4
Maximum IDSS (uA)	1
Maximum Operating Temperature (°C)	150
Maximum Power Dissipation (mW)	85000
Minimum Operating Temperature (°C)	-55
Mounting	Surface Mount
Number of Elements per Chip	1
Packaging	Tape and Reel
Part Status	Active
PCB changed	2
Pin Count	3
PPAP	No
Process Technology	MDmesh M2
Product Category	Power MOSFET
Standard Package Name	TO-252
Supplier Package	DPAK
Tab	Tab
Typical Fall Time (ns)	34.5
Typical Gate Charge @ 10V (nC)	15
Typical Gate Charge @ Vgs (nC)	15@10V
Typical Input Capacitance @ Vds (pF)	550@100V
Typical Rise Time (ns)	10.5
Typical Turn-Off Delay Time (ns)	8
Typical Turn-On Delay Time (ns)	13.5
Continuous Drain Current	10(A)
Drain-Source On-Volt	500(V)
Gate-Source Voltage (Max)	±30(V)
Number of Elements	1
Operating Temp Range	-55C to 150C
Operating Temperature Classification	Military
Package Type	DPAK
Polarity	N
Power Dissipation	85(W)
Rad Hardened	No
Type	Power MOSFET
Вес, г	4