STD16N60M2, MOSFET N-channel 600 V, 0.28 Ohm typ 12 A MDmesh M2 Power MOSFET in DPAK package
Изображения служат только для ознакомления,
см. техническую документацию
см. техническую документацию
9595 шт., срок 6-8 недель
480 руб.
от 10 шт. —
390 руб.
от 100 шт. —
308 руб.
от 250 шт. —
284.85 руб.
Добавить в корзину 1 шт.
на сумму 480 руб.
Альтернативные предложения1
Описание
Semiconductors\Discrete Semiconductors\Transistors\MOSFET
MDmesh™ II Power MOSFETsSTMicroelectronics 600 and 650V MDmesh™ M2 series of super-junction Power MOSFETs are optimized for soft-switching applications (LLC resonant power supplies) thanks to the optimized trade-off between R DS(on), gate charge (Qg) and intrinsic capacitances (Ciss, Coss). They also are suitable for PFC applications, especially at light loads.
Технические параметры
| Brand: | STMicroelectronics |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 2500 |
| Fall Time: | 18.5 ns |
| Id - Continuous Drain Current: | 12 A |
| Manufacturer: | STMicroelectronics |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | TO-252-3 |
| Pd - Power Dissipation: | 110 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 19 nC |
| Rds On - Drain-Source Resistance: | 280 mOhms |
| Rise Time: | 9.5 ns |
| Series: | STD16N60M2 |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | MDmesh |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 58 ns |
| Typical Turn-On Delay Time: | 10.5 ns |
| Vds - Drain-Source Breakdown Voltage: | 600 V |
| Vgs - Gate-Source Voltage: | -25 V, +25 V |
| Vgs th - Gate-Source Threshold Voltage: | 2 V |
| Channel Mode | Enhancement |
| Channel Type | N |
| Forward Diode Voltage | 1.6V |
| Maximum Continuous Drain Current | 12 A |
| Maximum Drain Source Resistance | 320 mΩ |
| Maximum Drain Source Voltage | 600 V |
| Maximum Gate Source Voltage | -25 V, +25 V |
| Maximum Gate Threshold Voltage | 4V |
| Maximum Operating Temperature | +150 °C |
| Maximum Power Dissipation | 110 W |
| Minimum Gate Threshold Voltage | 2V |
| Mounting Type | Surface Mount |
| Number of Elements per Chip | 1 |
| Package Type | DPAK(TO-252) |
| Pin Count | 3 |
| Series | MDmesh M2 |
| Transistor Configuration | Single |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 19 nC @ 10 V |
| Width | 6.2mm |
| Вес, г | 0.33 |
Техническая документация
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
Сроки доставки
Выберите регион, чтобы увидеть способы получения товара.
