STD17NF25, MOSFET NCh 30V 0.0032Ohm 20A MOSFET
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см. техническую документацию
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Описание
Semiconductors\Discrete Semiconductors\Transistors\MOSFET
Описание Транзистор: N-MOSFET, полевой, 250В, 10А, 90Вт, DPAK Характеристики | Категория | Транзистор |
| Тип | полевой |
| Вид | MOSFET |
Технические параметры
| Brand: | STMicroelectronics |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 2500 |
| Fall Time: | 8.8 ns |
| Id - Continuous Drain Current: | 17 A |
| Manufacturer: | STMicroelectronics |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | TO-252-3 |
| Pd - Power Dissipation: | 90 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 29.5 nC |
| Rds On - Drain-Source Resistance: | 165 mOhms |
| Rise Time: | 17.2 ns |
| Series: | STD17NF25 |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | STripFET |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 21 ns |
| Typical Turn-On Delay Time: | 8.8 ns |
| Vds - Drain-Source Breakdown Voltage: | 250 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 2 V |
| Brand | STMicroelectronics |
| Channel Mode | Enhancement |
| Configuration | Single |
| Factory Pack Quantity | 2500 |
| Fall Time | 8.8 ns |
| Height | 2.4 mm |
| Id - Continuous Drain Current | 17 A |
| Length | 6.6 mm |
| Manufacturer | STMicroelectronics |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | SMD/SMT |
| Number of Channels | 1 Channel |
| Package / Case | TO-252-3 |
| Packaging | Reel |
| Pd - Power Dissipation | 90 W |
| Product Category | MOSFET |
| Rds On - Drain-Source Resistance | 165 mOhms |
| Rise Time | 17.2 ns |
| RoHS | Details |
| Series | N-channel STripFET |
| Technology | Si |
| Transistor Polarity | N-Channel |
| Transistor Type | 1 N-Channel |
| Typical Turn-Off Delay Time | 21 ns |
| Typical Turn-On Delay Time | 8.8 ns |
| Unit Weight | 0.139332 oz |
| Vds - Drain-Source Breakdown Voltage | 250 V |
| Vgs - Gate-Source Voltage | 20 V |
| Width | 6.2 mm |
| Channel Type | N |
| Maximum Continuous Drain Current | 17 A |
| Maximum Drain Source Resistance | 165 mΩ |
| Maximum Drain Source Voltage | 250 V |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Maximum Gate Threshold Voltage | 4V |
| Maximum Power Dissipation | 90 W |
| Minimum Gate Threshold Voltage | 2V |
| Mounting Type | Surface Mount |
| Number of Elements per Chip | 1 |
| Package Type | DPAK(TO-252) |
| Pin Count | 3 |
| Transistor Configuration | Single |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 29.5 nC @ 10 V |
| Вес, г | 0.33 |
Техническая документация
Datasheet
pdf, 1680 КБ
Datasheet
pdf, 544 КБ
Datasheet STD17NF25
pdf, 519 КБ
Документация
pdf, 775 КБ
Datasheet STD17NF25
pdf, 776 КБ
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
Сроки доставки
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