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STGW60V60F, IGBT Transistors 600V 60A Trench Gate 1.8V Vce IGBT

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600 шт., срок 6-8 недель

1 200 руб.

от 10 шт. — 1 010 руб.

от 25 шт. — 849 руб.

от 100 шт. — 679.03 руб.

Добавить в корзину 1 шт. на сумму 1 200 руб.

Номенклатурный номер: 8004828623

Артикул: STGW60V60F

Бренд: STMicroelectronics

Описание

Semiconductors\Discrete Semiconductors\Transistors\IGBT Transistors

IGBT V Series
STMicroelectronics 600V trench-gate field-stop very high-speed IGBT V series features the industry's lowest Eoff. Combined with a saturation voltage as low as 1.8V and a maximum operating junction temperature of 175°C, they enable increased system efficiency, higher switching frequencies (up to 120kHz), and simplified thermal and EMI design.

Технические параметры

Brand:	STMicroelectronics
Collector- Emitter Voltage VCEO Max:	600 V
Collector-Emitter Saturation Voltage:	2.35 V
Configuration:	Single
Continuous Collector Current at 25 C:	80 A
Continuous Collector Current Ic Max:	60 A
Factory Pack Quantity: Factory Pack Quantity:	600
Manufacturer:	STMicroelectronics
Maximum Gate Emitter Voltage:	-20 V, +20 V
Maximum Operating Temperature:	+175 C
Minimum Operating Temperature:	-55 C
Mounting Style:	Through Hole
Package / Case:	TO-247-3
Packaging:	Tube
Pd - Power Dissipation:	375 W
Product Category:	IGBT Transistors
Product Type:	IGBT Transistors
Series:	STGW60V60F
Subcategory:	IGBTs
Technology:	Si
Collector Emitter Saturation Voltage	1.85В
Collector Emitter Voltage Max	600В
Continuous Collector Current	80А
Power Dissipation	375Вт
Количество Выводов	3вывод(-ов)
Линейка Продукции	600V V
Максимальная Рабочая Температура	175°C
Монтаж транзистора	Through Hole
Стиль Корпуса Транзистора	TO-247
Вес, г	38