STW88N65M5, MOSFET N-Ch 650V 0.024 Ohm 84A MDMesh M5

Изображения служат только для ознакомления,
см. техническую документацию

3346 шт., срок 6-8 недель

3 790 руб.

от 10 шт. — 3 590 руб.

от 25 шт. — 3 010 руб.

от 50 шт. — 2 707.86 руб.

Добавить в корзину 1 шт. на сумму 3 790 руб.

Альтернативные предложения1

Номенклатурный номер: 8004830984

Артикул: STW88N65M5

Описание Транзистор N-МОП, полевой, 650В, 50,5А, 450Вт, TO247-3

Channel Mode	Enhancement
Channel Type	N
Maximum Continuous Drain Current	84 A
Maximum Drain Source Resistance	29 mΩ
Maximum Drain Source Voltage	710 V
Maximum Gate Source Voltage	-25 V, +25 V
Maximum Gate Threshold Voltage	5V
Maximum Operating Temperature	+150 °C
Maximum Power Dissipation	450 W
Minimum Gate Threshold Voltage	3V
Mounting Type	Through Hole
Number of Elements per Chip	1
Package Type	TO-247
Pin Count	3
Series	MDmesh M5
Transistor Configuration	Single
Transistor Material	Si
Typical Gate Charge @ Vgs	204 nC @ 10 V
Width	5.15mm
Brand	STMicroelectronics
Configuration	Single
Factory Pack Quantity	600
Id - Continuous Drain Current	84 A
Manufacturer	STMicroelectronics
Minimum Operating Temperature	-55 C
Mounting Style	Through Hole
Number of Channels	1 Channel
Package / Case	TO-247-3
Packaging	Tube
Pd - Power Dissipation	450 W
Product Category	MOSFET
Qg - Gate Charge	204 nC
Rds On - Drain-Source Resistance	29 mOhms
RoHS	Details
Technology	Si
Transistor Polarity	N-Channel
Transistor Type	1 N-Channel
Vds - Drain-Source Breakdown Voltage	650 V
Vgs - Gate-Source Voltage	25 V
Вес, г	38