ULN2801A, Darlington Transistors Eight NPN Array
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Описание
Semiconductors\Discrete Semiconductors\Transistors\Darlington Transistors
Описание IC: driver; darlington,transistor array; DIP18; 0.5A; 50V; Ch: 8 Характеристики Категория | Микросхема |
Тип | драйвер |
Технические параметры
Brand: | STMicroelectronics |
Collector- Emitter Voltage VCEO Max: | 50 V |
Configuration: | Octal |
Continuous Collector Current: | 500 mA |
DC Collector/Base Gain hfe Min: | 1000 |
Factory Pack Quantity: Factory Pack Quantity: | 1000 |
Manufacturer: | STMicroelectronics |
Maximum DC Collector Current: | 500 mA |
Maximum Operating Temperature: | +85 C |
Minimum Operating Temperature: | -20 C |
Mounting Style: | Through Hole |
Package / Case: | PDIP-18 |
Packaging: | Tube |
Product Category: | Darlington Transistors |
Product Type: | Darlington Transistors |
Series: | ULN2801A |
Subcategory: | Transistors |
Transistor Polarity: | NPN |
Base Product Number | ULN2801 -> |
Current - Collector (Ic) (Max) | 500mA |
DC Current Gain (hFE) (Min) @ Ic, Vce | 1000 @ 350mA, 2V |
ECCN | EAR99 |
HTSUS | 8541.29.0095 |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Mounting Type | Through Hole |
Operating Temperature | -20В°C ~ 150В°C (TJ) |
Other Related Documents | http://www.st.com/web/catalog/sense_power/FM1968/C |
Package | Tube |
Package / Case | 18-DIP (0.300"", 7.62mm) |
Power - Max | 2.25W |
REACH Status | REACH Unaffected |
RoHS Status | ROHS3 Compliant |
Supplier Device Package | 18-DIP |
Transistor Type | 8 NPN Darlington |
Vce Saturation (Max) @ Ib, Ic | 1.6V @ 500ВµA, 350mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Automotive | No |
Configuration | Octal Common Emitter |
ECCN (US) | EAR99 |
EU RoHS | Compliant |
Lead Shape | Through Hole |
Maximum Base Current (A) | 0.025 |
Maximum Collector-Emitter Saturation Voltage (V) | 1.1 250uA 100mA|1.3 350uA 200mA|1.6 500uA 350mA |
Maximum Collector-Emitter Voltage (V) | 50 |
Maximum Continuous DC Collector Current (A) | 0.5 |
Maximum Operating Temperature (°C) | 85 |
Maximum Power Dissipation (mW) | 2250 |
Minimum DC Current Gain | 1000 350mA 2V |
Minimum DC Current Gain Range | 500 to 3600 |
Minimum Operating Temperature (°C) | -20 |
Mounting | Through Hole |
Number of Elements per Chip | 8 |
Operating Junction Temperature (°C) | -20 to 150 |
Packaging | Tube |
Part Status | Active |
PCB changed | 18 |
Pin Count | 18 |
PPAP | No |
Standard Package Name | DIP |
Supplier Package | PDIP |
Type | NPN |
Base Current | 25mA |
Maximum Collector Emitter Saturation Voltage | 1.6 V |
Maximum Collector Emitter Voltage | 50 V |
Maximum Continuous Collector Current | 500 mA |
Maximum Operating Temperature | +150 °C |
Maximum Power Dissipation | 2.25 W |
Minimum Operating Temperature | -20 °C |
Package Type | DIP |
Transistor Configuration | Common Emitter |
Width | 7.1mm |
Вес, г | 2 |
Техническая документация
Datasheet
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Дополнительная информация
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