FCP190N60E, MOSFET 600V N-CHAN MOSFET
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Описание
Semiconductors\Discrete Semiconductors\Transistors\MOSFET
Industrial Power SolutionsIndustrial applications will be a major contributor to the expected 35% to 40% world energy demand increase by 2030. Electronics and semiconductors can play a major role in energy conservation. onsemi power semiconductors today are clean energy enablers for a variety of industrial applications. onsemi offers IGBTs and MOSFETs featuring high current handling capability and low conduction and switching loss; optically isolated gate drivers with wide operating voltage range and high common-mode transient immunity; FPS™ controllers designed for high-performance power supplies with minimal external components; creative smart dual-coil relay drivers with integrated switches and wafer-level adjust capability for timing customization; and web-based tools that eliminate tedious bench time and allow popular power supply designs to be completed in minutes, saving weeks of time. onsemi combines power analog, power discrete and optoelectronic functional technologies, unique combinations of these functions for novel integrated solutions, and leading process and packing technologies that reduce size, heat, and cost. From source to system, look to onsemi for engineering energy efficiency.
Технические параметры
Brand: | onsemi/Fairchild |
Channel Mode: | Enhancement |
Configuration: | Single |
Factory Pack Quantity: Factory Pack Quantity: | 50 |
Fall Time: | 15 ns |
Id - Continuous Drain Current: | 20.6 A |
Manufacturer: | onsemi |
Maximum Operating Temperature: | +150 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | Through Hole |
Number of Channels: | 1 Channel |
Package / Case: | TO-220-3 |
Packaging: | Tube |
Pd - Power Dissipation: | 208 W |
Product Category: | MOSFET |
Product Type: | MOSFET |
Qg - Gate Charge: | 63 nC |
Rds On - Drain-Source Resistance: | 190 mOhms |
Rise Time: | 14 ns |
Series: | FCP190N60E |
Subcategory: | MOSFETs |
Technology: | Si |
Tradename: | SuperFET II |
Transistor Polarity: | N-Channel |
Transistor Type: | 1 N-Channel |
Type: | 600 V N-Channel MOSFET |
Typical Turn-Off Delay Time: | 101 ns |
Typical Turn-On Delay Time: | 23 ns |
Vds - Drain-Source Breakdown Voltage: | 600 V |
Vgs - Gate-Source Voltage: | -20 V, +20 V |
Vgs th - Gate-Source Threshold Voltage: | 2.5 V |
Channel Mode | Enhancement |
Channel Type | N |
Maximum Continuous Drain Current | 20 A |
Maximum Drain Source Resistance | 190 mΩ |
Maximum Drain Source Voltage | 600 V |
Maximum Gate Source Voltage | -30 V, +30 V |
Maximum Operating Temperature | +150 °C |
Maximum Power Dissipation | 208 W |
Minimum Gate Threshold Voltage | 2.5V |
Minimum Operating Temperature | -55 °C |
Mounting Type | Through Hole |
Number of Elements per Chip | 1 |
Package Type | TO-220 |
Pin Count | 3 |
Series | SuperFET II |
Transistor Configuration | Single |
Transistor Material | Si |
Typical Gate Charge @ Vgs | 63 nC @ 10 V |
Width | 4.83mm |
Вес, кг | 2.53 |
Техническая документация
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
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