FCP190N60E, MOSFET 600V N-CHAN MOSFET

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Номенклатурный номер: 8004833311
Артикул: FCP190N60E

Описание

Semiconductors\Discrete Semiconductors\Transistors\MOSFET
Industrial Power Solutions
Industrial applications will be a major contributor to the expected 35% to 40% world energy demand increase by 2030. Electronics and semiconductors can play a major role in energy conservation. onsemi power semiconductors today are clean energy enablers for a variety of industrial applications. onsemi offers IGBTs and MOSFETs featuring high current handling capability and low conduction and switching loss; optically isolated gate drivers with wide operating voltage range and high common-mode transient immunity; FPS™ controllers designed for high-performance power supplies with minimal external components; creative smart dual-coil relay drivers with integrated switches and wafer-level adjust capability for timing customization; and web-based tools that eliminate tedious bench time and allow popular power supply designs to be completed in minutes, saving weeks of time. onsemi combines power analog, power discrete and optoelectronic functional technologies, unique combinations of these functions for novel integrated solutions, and leading process and packing technologies that reduce size, heat, and cost. From source to system, look to onsemi for engineering energy efficiency.

Технические параметры

Brand: onsemi/Fairchild
Channel Mode: Enhancement
Configuration: Single
Factory Pack Quantity: Factory Pack Quantity: 50
Fall Time: 15 ns
Id - Continuous Drain Current: 20.6 A
Manufacturer: onsemi
Maximum Operating Temperature: +150 C
Minimum Operating Temperature: -55 C
Mounting Style: Through Hole
Number of Channels: 1 Channel
Package / Case: TO-220-3
Packaging: Tube
Pd - Power Dissipation: 208 W
Product Category: MOSFET
Product Type: MOSFET
Qg - Gate Charge: 63 nC
Rds On - Drain-Source Resistance: 190 mOhms
Rise Time: 14 ns
Series: FCP190N60E
Subcategory: MOSFETs
Technology: Si
Tradename: SuperFET II
Transistor Polarity: N-Channel
Transistor Type: 1 N-Channel
Type: 600 V N-Channel MOSFET
Typical Turn-Off Delay Time: 101 ns
Typical Turn-On Delay Time: 23 ns
Vds - Drain-Source Breakdown Voltage: 600 V
Vgs - Gate-Source Voltage: -20 V, +20 V
Vgs th - Gate-Source Threshold Voltage: 2.5 V
Channel Mode Enhancement
Channel Type N
Maximum Continuous Drain Current 20 A
Maximum Drain Source Resistance 190 mΩ
Maximum Drain Source Voltage 600 V
Maximum Gate Source Voltage -30 V, +30 V
Maximum Operating Temperature +150 °C
Maximum Power Dissipation 208 W
Minimum Gate Threshold Voltage 2.5V
Minimum Operating Temperature -55 °C
Mounting Type Through Hole
Number of Elements per Chip 1
Package Type TO-220
Pin Count 3
Series SuperFET II
Transistor Configuration Single
Transistor Material Si
Typical Gate Charge @ Vgs 63 nC @ 10 V
Width 4.83mm
Вес, кг 2.53

Техническая документация

Datasheet
pdf, 1680 КБ
Datasheet
pdf, 275 КБ
Datasheet
pdf, 805 КБ

Дополнительная информация

Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов