FCP380N60E, MOSFET 600V N-CHAN MOSFET
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Описание
Semiconductors\Discrete Semiconductors\Transistors\MOSFET
SuperFET® II Power MOSFETsonsemi SuperFET® II Power MOSFETs are a high voltage MOSFET family utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. SuperFET II MOSFETs are suitable for various AC-DC power conversion in switching mode operation for system miniaturization and high efficiency.
Технические параметры
Brand: | onsemi/Fairchild |
Channel Mode: | Enhancement |
Configuration: | Single |
Factory Pack Quantity: Factory Pack Quantity: | 50 |
Id - Continuous Drain Current: | 10.2 A |
Manufacturer: | onsemi |
Maximum Operating Temperature: | +150 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | Through Hole |
Number of Channels: | 1 Channel |
Package / Case: | TO-220-3 |
Packaging: | Tube |
Pd - Power Dissipation: | 106 W |
Product Category: | MOSFET |
Product Type: | MOSFET |
Qg - Gate Charge: | 45 nC |
Rds On - Drain-Source Resistance: | 380 mOhms |
Series: | FCP380N60E |
Subcategory: | MOSFETs |
Technology: | Si |
Tradename: | SuperFET II |
Transistor Polarity: | N-Channel |
Transistor Type: | 1 N-Channel |
Vds - Drain-Source Breakdown Voltage: | 600 V |
Vgs - Gate-Source Voltage: | -20 V, +20 V |
Vgs th - Gate-Source Threshold Voltage: | 2.5 V |
Вес, г | 1.95 |
Техническая документация
Datasheet
pdf, 804 КБ
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов