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FCPF067N65S3, MOSFET SuperFET3 650V 67 mOhm

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1 810 руб.

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от 100 шт. — 1 085.47 руб.

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Номенклатурный номер: 8004833325

Артикул: FCPF067N65S3

Бренд: ON Semiconductor***

Описание

Semiconductors\Discrete Semiconductors\Transistors\MOSFET

SuperFET® III MOSFETs
onsemi SuperFET® III MOSFETs are high voltage Super-Junction (SJ) N-Channel MOSFETs designed to meet the high power density, system efficiency, and exceptional reliability requirements of telecom, server, electric vehicle (EV) charger and solar products. These devices combine best-in-class reliability, low EMI, excellent efficiency, and superior thermal performance to make them an ideal choice for high-performance applications. Complementing their performance characteristics, the broad range of package options offered by onsemi SuperFET III MOSFETs gives product designers high flexibility, particularly with size-constrained designs.

Технические параметры

Brand:	onsemi/Fairchild
Channel Mode:	Enhancement
Configuration:	Single
Factory Pack Quantity: Factory Pack Quantity:	50
Fall Time:	16 ns
Forward Transconductance - Min:	29 S
Id - Continuous Drain Current:	44 A
Manufacturer:	onsemi
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	Through Hole
Number of Channels:	1 Channel
Package / Case:	TO-220-3
Packaging:	Tube
Pd - Power Dissipation:	46 W
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	78 nC
Rds On - Drain-Source Resistance:	67 mOhms
REACH - SVHC:	Details
Rise Time:	52 ns
Series:	FCPF067N65S3
Subcategory:	MOSFETs
Technology:	Si
Tradename:	SuperFET III
Transistor Polarity:	N-Channel
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	89 ns
Typical Turn-On Delay Time:	26 ns
Vds - Drain-Source Breakdown Voltage:	650 V
Vgs - Gate-Source Voltage:	-20 V, +20 V
Vgs th - Gate-Source Threshold Voltage:	2.5 V
Channel Mode	Enhancement
Channel Type	N
Forward Diode Voltage	1.2V
Maximum Continuous Drain Current	44 A
Maximum Drain Source Resistance	67 mΩ
Maximum Drain Source Voltage	650 V
Maximum Gate Source Voltage	±30 V
Maximum Gate Threshold Voltage	4.5V
Maximum Operating Temperature	+150 °C
Maximum Power Dissipation	46 W
Minimum Gate Threshold Voltage	2.5V
Minimum Operating Temperature	-55 °C
Mounting Type	Through Hole
Number of Elements per Chip	1
Package Type	TO-220F
Pin Count	3
Transistor Configuration	Single
Typical Gate Charge @ Vgs	78 nC @ 10 V
Width	4.9mm
Вес, кг	69.3