FDB031N08, MOSFET 75V N-Channel PowerTrench

FDB031N08, MOSFET 75V N-Channel PowerTrench
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1 430 руб.
от 10 шт.1 220 руб.
от 25 шт.1 100 руб.
от 100 шт.915.11 руб.
Добавить в корзину 1 шт. на сумму 1 430 руб.
Номенклатурный номер: 8004833382
Артикул: FDB031N08

Описание

Semiconductors\Discrete Semiconductors\Transistors\MOSFET
Cloud Power Management Solutions

onsemi Cloud Power Management Solutions drive efficiency while simplifying system design, reducing board space, improving reliability and accelerating time to market. As the world demand for energy increases by 35 to 40% by 2030, onsemi powers major industrial products with cool efficiency to conserve the energy we use every day.

Технические параметры

Brand: onsemi/Fairchild
Channel Mode: Enhancement
Configuration: Single
Factory Pack Quantity: Factory Pack Quantity: 800
Fall Time: 121 ns
Id - Continuous Drain Current: 235 A
Manufacturer: onsemi
Maximum Operating Temperature: +175 C
Minimum Operating Temperature: -55 C
Mounting Style: SMD/SMT
Number of Channels: 1 Channel
Package / Case: D2PAK-3(TO-263-3)
Pd - Power Dissipation: 375 W
Product Category: MOSFET
Product Type: MOSFET
Qg - Gate Charge: 220 nC
Rds On - Drain-Source Resistance: 3.1 mOhms
REACH - SVHC: Details
Rise Time: 191 ns
Series: FDB031N08
Subcategory: MOSFETs
Technology: Si
Tradename: PowerTrench
Transistor Polarity: N-Channel
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 335 ns
Typical Turn-On Delay Time: 230 ns
Vds - Drain-Source Breakdown Voltage: 75 V
Vgs - Gate-Source Voltage: -20 V, +20 V
Vgs th - Gate-Source Threshold Voltage: 2.5 V
Вес, г 4

Техническая документация

Datasheet
pdf, 664 КБ

Дополнительная информация

Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов