FDB44N25TM, MOSFET 250V N-Ch MOSFET
Изображения служат только для ознакомления,
см. техническую документацию
см. техническую документацию
620 руб.
от 10 шт. —
520 руб.
от 100 шт. —
430 руб.
от 500 шт. —
357.52 руб.
Добавить в корзину 1 шт.
на сумму 620 руб.
Описание
Semiconductors\Discrete Semiconductors\Transistors\MOSFET
Cloud Power Management Solutionsonsemi Cloud Power Management Solutions drive efficiency while simplifying system design, reducing board space, improving reliability and accelerating time to market. As the world demand for energy increases by 35 to 40% by 2030, onsemi powers major industrial products with cool efficiency to conserve the energy we use every day.
Технические параметры
| Brand: | onsemi/Fairchild |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 800 |
| Fall Time: | 115 ns |
| Forward Transconductance - Min: | 32 S |
| Id - Continuous Drain Current: | 44 A |
| Manufacturer: | onsemi |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | D2PAK-3(TO-263-3) |
| Pd - Power Dissipation: | 307 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 61 nC |
| Rds On - Drain-Source Resistance: | 69 mOhms |
| REACH - SVHC: | Details |
| Rise Time: | 400 ns |
| Series: | FDB44N25 |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 85 ns |
| Typical Turn-On Delay Time: | 55 ns |
| Vds - Drain-Source Breakdown Voltage: | 250 V |
| Vgs - Gate-Source Voltage: | -30 V, +30 V |
| Vgs th - Gate-Source Threshold Voltage: | 3 V |
| Brand | ON Semiconductor/Fairchild |
| Channel Mode | Enhancement |
| Configuration | Single |
| Factory Pack Quantity | 800 |
| Fall Time | 115 ns |
| Forward Transconductance - Min | 32 S |
| Height | 4.83 mm |
| Id - Continuous Drain Current | 44 A |
| Length | 10.67 mm |
| Manufacturer | ON Semiconductor |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | SMD/SMT |
| Number of Channels | 1 Channel |
| Package / Case | TO-263-3 |
| Packaging | Reel |
| Pd - Power Dissipation | 307 W |
| Product Category | MOSFET |
| Rds On - Drain-Source Resistance | 69 mOhms |
| Rise Time | 400 ns |
| RoHS | Details |
| Series | FDB44N25 |
| Technology | Si |
| Transistor Polarity | N-Channel |
| Transistor Type | 1 N-Channel |
| Typical Turn-Off Delay Time | 85 ns |
| Typical Turn-On Delay Time | 55 ns |
| Unit Weight | 0.046296 oz |
| Vds - Drain-Source Breakdown Voltage | 250 V |
| Vgs - Gate-Source Voltage | 30 V |
| Width | 9.65 mm |
| Channel Type | N |
| Maximum Continuous Drain Current | 44 A |
| Maximum Drain Source Resistance | 69 mΩ |
| Maximum Drain Source Voltage | 250 V |
| Maximum Power Dissipation | 307 W |
| Minimum Gate Threshold Voltage | 3V |
| Mounting Type | Surface Mount |
| Number of Elements per Chip | 1 |
| Package Type | D2PAK(TO-263) |
| Pin Count | 3 |
| Transistor Configuration | Single |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 47 nC @ 10 V |
| Вес, г | 3.95 |
Техническая документация
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
