FGA40T65SHD, IGBT Transistors 650 V, 40 A Field Stop Trench IGBT

FGA40T65SHD, IGBT Transistors 650 V, 40 A Field Stop Trench IGBT
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1 080 руб.
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от 25 шт.800 руб.
от 100 шт.679.58 руб.
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Номенклатурный номер: 8004834073
Артикул: FGA40T65SHD

Описание

Semiconductors\Discrete Semiconductors\Transistors\IGBT Transistors
Field Stop IGBTs

onsemi Field Stop (FS) IGBTs offer optimum performance with low conduction and switching losses. These IGBTs feature high current handling capability, positive temperature coefficient, tight parameter distribution, and a wide safe operating area. The FS IGBTs come with increased breakdown voltage that improves reliability where negative ambient temperatures are present. As the temperature decreases the IGBT and FRD blocking voltage also decreases that makes the devices particularly beneficial for PV solar inverters used in colder climates. onsemi IGBTs provide fast and soft recovery that reduces power dissipation and achieves low turn-on and turn-off losses.

Технические параметры

Brand: onsemi/Fairchild
Collector- Emitter Voltage VCEO Max: 650 V
Collector-Emitter Saturation Voltage: 1.6 V
Configuration: Single
Continuous Collector Current at 25 C: 80 A
Continuous Collector Current Ic Max: 80 A
Factory Pack Quantity: Factory Pack Quantity: 30
Gate-Emitter Leakage Current: 400 nA
Manufacturer: onsemi
Maximum Gate Emitter Voltage: -20 V, 20 V
Maximum Operating Temperature: +175 C
Minimum Operating Temperature: -55 C
Mounting Style: Through Hole
Package / Case: TO-3PN
Packaging: Tube
Pd - Power Dissipation: 268 W
Product Category: IGBT Transistors
Product Type: IGBT Transistors
Series: FGA40T65SHD
Subcategory: IGBTs
Technology: Si
Вес, г 6.4

Техническая документация

Datasheet
pdf, 1483 КБ

Дополнительная информация

Калькуляторы группы «Транзисторы биполярные с изолированным затвором (IGBTs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов