FGH75T65SHDTL4, IGBT Transistors FS3 TIGBT Excellent switching performan
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Описание
Semiconductors\Discrete Semiconductors\Transistors\IGBT Transistors
FGAFx0N60 Field Stop IGBTsonsemi FGAFx0N60 650V Field Stop IGBTs use a novel field stop IGBT technology. These IGBTs feature high current capability, low saturation voltage, high input impedance, and fast switching. onsemi FGAFx0N60 IGBTs offer the optimum performance for solar inverters, UPS, welder, and PFC applications that require low conduction and switching losses.
Технические параметры
| Brand: | onsemi/Fairchild |
| Collector- Emitter Voltage VCEO Max: | 650 V |
| Collector-Emitter Saturation Voltage: | 1.6 V |
| Configuration: | Single |
| Continuous Collector Current at 25 C: | 150 A |
| Continuous Collector Current Ic Max: | 150 A |
| Factory Pack Quantity: Factory Pack Quantity: | 30 |
| Gate-Emitter Leakage Current: | 400 nA |
| Manufacturer: | onsemi |
| Maximum Gate Emitter Voltage: | -20 V, 20 V |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | Through Hole |
| Package / Case: | TO-247-4 |
| Packaging: | Tube |
| Pd - Power Dissipation: | 455 W |
| Product Category: | IGBT Transistors |
| Product Type: | IGBT Transistors |
| Series: | FGH75T65SHDTL4 |
| Subcategory: | IGBTs |
| Technology: | Si |
| Channel Type | P |
| Energy Rating | 160mJ |
| Gate Capacitance | 3710pF |
| Maximum Collector Emitter Voltage | 650 V |
| Maximum Continuous Collector Current | 150 A |
| Maximum Gate Emitter Voltage | ±20V |
| Maximum Operating Temperature | +175 °C |
| Maximum Power Dissipation | 455 W |
| Minimum Operating Temperature | -55 °C |
| Mounting Type | Through Hole |
| Number of Transistors | 1 |
| Package Type | TO-247 |
| Pin Count | 4 |
| Switching Speed | 1MHz |
| Transistor Configuration | Single |
| Вес, г | 6.29 |
Техническая документация
Дополнительная информация
Калькуляторы группы «Транзисторы биполярные с изолированным затвором (IGBTs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
