FGY120T65SPD-F085, IGBT Transistors 650V FS Trench IGBT Gen3

Фото 1/2 FGY120T65SPD-F085, IGBT Transistors 650V FS Trench IGBT Gen3
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4 180 руб.
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от 25 шт.2 730 руб.
от 50 шт.2 718.31 руб.
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Номенклатурный номер: 8004834145
Артикул: FGY120T65SPD-F085

Описание

Semiconductors\Discrete Semiconductors\Transistors\IGBT Transistors
Field Stop IGBTs

onsemi Field Stop (FS) IGBTs offer optimum performance with low conduction and switching losses. These IGBTs feature high current handling capability, positive temperature coefficient, tight parameter distribution, and a wide safe operating area. The FS IGBTs come with increased breakdown voltage that improves reliability where negative ambient temperatures are present. As the temperature decreases the IGBT and FRD blocking voltage also decreases that makes the devices particularly beneficial for PV solar inverters used in colder climates. onsemi IGBTs provide fast and soft recovery that reduces power dissipation and achieves low turn-on and turn-off losses.

Технические параметры

Brand: onsemi/Fairchild
Collector- Emitter Voltage VCEO Max: 650 V
Collector-Emitter Saturation Voltage: 1.5 V
Configuration: Single
Continuous Collector Current at 25 C: 240 A
Continuous Collector Current Ic Max: 240 A
Factory Pack Quantity: Factory Pack Quantity: 30
Gate-Emitter Leakage Current: +/-250 nA
Manufacturer: onsemi
Maximum Gate Emitter Voltage: -20 V, 20 V
Maximum Operating Temperature: +175 C
Minimum Operating Temperature: -55 C
Mounting Style: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Part # Aliases: FGY120T65SPD_F085
Pd - Power Dissipation: 882 W
Product Category: IGBT Transistors
Product Type: IGBT Transistors
Qualification: AEC-Q101
Series: FGY120T65S_F085
Subcategory: IGBTs
Technology: Si
Collector Emitter Saturation Voltage 1.5В
Collector Emitter Voltage Max 650В
Continuous Collector Current 120А
Power Dissipation 882Вт
Количество Выводов 3вывод(-ов)
Линейка Продукции Field Stop Trench Series
Максимальная Рабочая Температура 175°C
Монтаж транзистора Through Hole
Стандарты Автомобильной Промышленности AEC-Q101
Стиль Корпуса Транзистора TO-247
Вес, г 6.1

Техническая документация

Datasheet
pdf, 472 КБ

Дополнительная информация

Калькуляторы группы «Транзисторы биполярные с изолированным затвором (IGBTs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов