ZXMHC10A07N8TC, MOSFET Mosfet H-Bridge 100/-100 1.1/-0.9
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Описание
Semiconductors\Discrete Semiconductors\Transistors\MOSFET
Описание Транзистор N/P-MOSFET x2, полевой, комплементарная пара, 0,87Вт Характеристики | Категория | Транзистор |
| Тип | полевой |
| Вид | MOSFET |
Технические параметры
| Brand: | Diodes Incorporated |
| Channel Mode: | Enhancement |
| Configuration: | Quad |
| Factory Pack Quantity: Factory Pack Quantity: | 2500 |
| Fall Time: | 2.1 ns, 3.3 ns |
| Forward Transconductance - Min: | 1.6 S, 1.2 S |
| Id - Continuous Drain Current: | 1 A, 850 mA |
| Manufacturer: | Diodes Incorporated |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 4 Channel |
| Package / Case: | SOIC-8 |
| Pd - Power Dissipation: | 870 mW |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 2.9 nC, 3.5 nC |
| Rds On - Drain-Source Resistance: | 700 mOhms, 1.45 Ohms |
| Rise Time: | 1.5 ns, 2.1 ns |
| Series: | ZXMHC10 |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | N-Channel, P-Channel |
| Transistor Type: | 2 N-Channel, 2 P-Channel |
| Typical Turn-Off Delay Time: | 4.1 ns, 5.9 ns |
| Typical Turn-On Delay Time: | 1.8 ns, 1.6 ns |
| Vds - Drain-Source Breakdown Voltage: | 100 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 2 V |
| Automotive | No |
| Channel Mode | Enhancement |
| Channel Type | N|P |
| Configuration | Quad |
| ECCN (US) | EAR99 |
| EU RoHS | Compliant |
| Lead Shape | Gull-wing |
| Maximum Continuous Drain Current (A) | 0.8@N Channel|0.68@P Channel |
| Maximum Drain Source Resistance (mOhm) | 700@10V@N Channel|1000@10V@P Channel |
| Maximum Drain Source Voltage (V) | 100 |
| Maximum Gate Source Voltage (V) | ±20 |
| Maximum Operating Temperature (°C) | 150 |
| Maximum Power Dissipation (mW) | 1360 |
| Minimum Operating Temperature (°C) | -55 |
| Mounting | Surface Mount |
| Number of Elements per Chip | 4 |
| Packaging | Tape and Reel |
| Part Status | Active |
| PCB changed | 8 |
| Pin Count | 8 |
| PPAP | No |
| Product Category | Power MOSFET |
| Standard Package Name | SO |
| Supplier Package | SO |
| Typical Fall Time (ns) | 2.1 |
| Typical Gate Charge @ 10V (nC) | 2.9 |
| Typical Gate Charge @ Vgs (nC) | 2.9@10V |
| Typical Input Capacitance @ Vds (pF) | 138@60V |
| Typical Rise Time (ns) | 1.5 |
| Typical Turn-Off Delay Time (ns) | 4.1 |
| Typical Turn-On Delay Time (ns) | 1.8 |
| Вес, г | 0.75 |
Техническая документация
Datasheet
pdf, 722 КБ
Datasheet ZXMHC10A07N8TC
pdf, 721 КБ
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
