ZXMHC10A07T8TA, MOSFET 100V 1.4A N-Channel MOSFET H-Bridge

Фото 1/2 ZXMHC10A07T8TA, MOSFET 100V 1.4A N-Channel MOSFET H-Bridge
Изображения служат только для ознакомления,
см. техническую документацию
570 руб.
от 10 шт.450 руб.
от 100 шт.338 руб.
от 250 шт.300.64 руб.
Добавить в корзину 1 шт. на сумму 570 руб.
Номенклатурный номер: 8004841990
Артикул: ZXMHC10A07T8TA
Бренд: DIODES INC.

Описание

Semiconductors\Discrete Semiconductors\Transistors\MOSFET
Power MOSFETs
Diodes Incorporated offers a broad range of Power MOSFETs, enabling designers to select a device optimized for their end application, thus enabling next generation consumer, computer and communication product designs. The Diodes portfolio is ideally suited to meeting the circuit requirements of DC-DC conversion, load switching, motor control, backlighting, battery protection, battery chargers, audio circuits, and automotive applications.

Технические параметры

Brand: Diodes Incorporated
Channel Mode: Enhancement
Configuration: Quad
Factory Pack Quantity: Factory Pack Quantity: 1000
Fall Time: 2.1 ns, 3.3 ns
Forward Transconductance - Min: 1.6 S, 1.2 S
Id - Continuous Drain Current: 1.1 A
Manufacturer: Diodes Incorporated
Maximum Operating Temperature: +150 C
Minimum Operating Temperature: -55 C
Mounting Style: SMD/SMT
Number of Channels: 4 Channel
Package/Case: SM-8
Pd - Power Dissipation: 1.3 W
Product Category: MOSFET
Product Type: MOSFET
Product: MOSFET Small Signals
Qg - Gate Charge: 2.9 nC, 3.5 nC
Rds On - Drain-Source Resistance: 700 mOhms, 1 Ohms
REACH - SVHC: Details
Rise Time: 1.5 ns, 2.1 ns
Series: ZXMHC10
Subcategory: MOSFETs
Technology: Si
Transistor Polarity: N-Channel, P-Channel
Transistor Type: 2 N-Channel, 2 P-Channel
Typical Turn-Off Delay Time: 4.1 ns, 5.9 ns
Typical Turn-On Delay Time: 1.8 ns, 1.6 ns
Vds - Drain-Source Breakdown Voltage: 100 V
Vgs - Gate-Source Voltage: -20 V, +20 V
Vgs th - Gate-Source Threshold Voltage: 2 V
Channel Mode Enhancement
Channel Type N, P
Maximum Continuous Drain Current 1.1 A, 800 mA
Maximum Drain Source Resistance 0.9 O, 1.45 O
Maximum Drain Source Voltage 100 V
Maximum Gate Threshold Voltage 4 V, 4 V
Mounting Type Surface Mount
Number of Elements per Chip 4
Package Type SOT-223
Pin Count 8
Вес, г 117

Техническая документация

Datasheet ZXMHC10A07T8TA
pdf, 718 КБ

Дополнительная информация

Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов