ALD210800ASCL, MOSFET PREC N-CHAN EPAD CMOS MOSFET ARRAY
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Описание
Semiconductors\Discrete Semiconductors\Transistors\MOSFET
Advanced Linear Devices ALD210800/ALD210800A Precision N-Channel EPAD® MOSFET Arrays - INACTIVEAdvanced Linear Devices ALD210800/ALD210800A Precision N-Channel EPAD® MOSFET Arrays are precision matched at the factory using ALD's proven EPAD® CMOS technology. These quad monolithic devices are enhanced additions to the ALD110800A/ALD110800 EPAD® MOSFET Family, with increased forward transconductance and output conductance, particularly at very low supply voltages. Intended for low voltage, low power small signal applications, the ALD210800/ALD210800A features Zero-Threshold™ voltage, which enables circuit designs with input/output signals referenced to GND at enhanced operating voltage ranges. With these devices, a circuit with multiple cascading stages can be built to operate at extremely low supply/bias voltage levels.
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Технические параметры
| Brand: | Advanced Linear Devices |
| Channel Mode: | Enhancement |
| Configuration: | Quad |
| Factory Pack Quantity: Factory Pack Quantity: | 50 |
| Id - Continuous Drain Current: | 80 mA |
| Manufacturer: | Advanced Linear Devices |
| Maximum Operating Temperature: | +70 C |
| Minimum Operating Temperature: | 0 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 4 Channel |
| Package / Case: | SOIC-16 |
| Packaging: | Tube |
| Pd - Power Dissipation: | 500 mW |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Rds On - Drain-Source Resistance: | 25 Ohms |
| Series: | ALD210800A |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 4 N-Channel |
| Typical Turn-Off Delay Time: | 10 ns |
| Typical Turn-On Delay Time: | 10 ns |
| Vds - Drain-Source Breakdown Voltage: | 10.6 V |
| Vgs - Gate-Source Voltage: | -12 V, +12 V |
| Vgs th - Gate-Source Threshold Voltage: | 20 mV |
| Вес, г | 0.67 |
Техническая документация
Datasheet ALD210800ASCL
pdf, 513 КБ
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
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