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CSD18502Q5BT, MOSFET 40-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 2.3 mOhm 8-VSON-CLIP -55 to 150

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780 руб.

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Номенклатурный номер: 8004997227

Артикул: CSD18502Q5BT

Бренд: Texas Instruments

Описание

Semiconductors\Discrete Semiconductors\Transistors\MOSFET

NexFET N-Channel Power MOSFETs

Texas Instruments NexFET N-Channel Power MOSFETs are designed to minimize losses in power conversion applications. These N-channel devices feature ultra-low Q g and Q d and low thermal resistance. These devices are avalanche rated and come in a SON 5mm x 6mm plastic package.

Технические параметры

Brand:	Texas Instruments
Channel Mode:	Enhancement
Configuration:	Single
Factory Pack Quantity: Factory Pack Quantity:	250
Fall Time:	4 ns
Forward Transconductance - Min:	143 S
Id - Continuous Drain Current:	100 A
Manufacturer:	Texas Instruments
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	SMD/SMT
Number of Channels:	1 Channel
Package / Case:	VSON-CLIP-8
Pd - Power Dissipation:	156 W
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	52 nC
Rds On - Drain-Source Resistance:	2.3 mOhms
Rise Time:	6.8 ns
Series:	CSD18502Q5B
Subcategory:	MOSFETs
Technology:	Si
Tradename:	NexFET
Transistor Polarity:	N-Channel
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	23 ns
Typical Turn-On Delay Time:	5.3 ns
Vds - Drain-Source Breakdown Voltage:	40 V
Vgs - Gate-Source Voltage:	-20 V, +20 V
Vgs th - Gate-Source Threshold Voltage:	1.5 V
Base Product Number	CSD18502 ->
Current - Continuous Drain (Id) @ 25В°C	100A (Ta)
Drain to Source Voltage (Vdss)	40V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
ECCN	EAR99
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	33nC @ 4.5V
HTSUS	8541.29.0095
Input Capacitance (Ciss) (Max) @ Vds	5070pF @ 20V
Manufacturer Product Page	http://www.ti.com/general/docs/suppproductinfo.tsp
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Mounting Type	Surface Mount
Operating Temperature	-55В°C ~ 150В°C (TJ)
Package	Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ®
Package / Case	8-PowerTDFN
Power Dissipation (Max)	3.2W (Ta), 156W (Tc)
Rds On (Max) @ Id, Vgs	2.3mOhm @ 30A, 10V
REACH Status	REACH Affected
RoHS Status	ROHS3 Compliant
Series	NexFETв„ў ->
Supplier Device Package	8-VSON-CLIP (5x6)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	В±20V
Vgs(th) (Max) @ Id	2.2V @ 250ВµA
Вес, г	0.12