Главная › Электронные компоненты › Транзисторы › Полевые (FETs, MOSFETs) › Texas Instruments › CSD18509Q5B, MOSFET 40V, N-channel NexFET Pwr ...

CSD18509Q5B, MOSFET 40V, N-channel NexFET Pwr MOSFET

Изображения служат только для ознакомления,
см. техническую документацию

660 руб.

от 10 шт. — 520 руб.

от 100 шт. — 391 руб.

от 250 шт. — 350.47 руб.

Добавить в корзину 1 шт. на сумму 660 руб.

Номенклатурный номер: 8004997232

Артикул: CSD18509Q5B

Бренд: Texas Instruments

Описание

Semiconductors\Discrete Semiconductors\Transistors\MOSFET

NexFET™ Power MOSFETs

Texas Instruments NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. Texas Instruments NexFET Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.

Технические параметры

Brand:	Texas Instruments
Channel Mode:	Enhancement
Configuration:	Single
Factory Pack Quantity: Factory Pack Quantity:	2500
Fall Time:	11 ns
Id - Continuous Drain Current:	50 A
Manufacturer:	Texas Instruments
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	SMD/SMT
Number of Channels:	1 Channel
Package / Case:	VSON-CLIP-8
Pd - Power Dissipation:	195 W
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	150 nC
Rds On - Drain-Source Resistance:	1.3 mOhms
Rise Time:	19 ns
Series:	CSD18509Q5B
Subcategory:	MOSFETs
Technology:	Si
Tradename:	NexFET
Transistor Polarity:	N-Channel
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	57 ns
Typical Turn-On Delay Time:	9 ns
Vds - Drain-Source Breakdown Voltage:	40 V
Vgs - Gate-Source Voltage:	-20 V, +20 V
Vgs th - Gate-Source Threshold Voltage:	1.4 V
Brand	Texas Instruments
Channel Mode	Enhancement
Configuration	Single
Factory Pack Quantity	2500
Fall Time	11 ns
Id - Continuous Drain Current	299 A
Manufacturer	Texas Instruments
Maximum Operating Temperature	+150 C
Minimum Operating Temperature	-55 C
Mounting Style	SMD/SMT
Number of Channels	1 Channel
Packaging	Reel
Pd - Power Dissipation	195 W
Product Category	MOSFET
Qg - Gate Charge	150 nC
Rds On - Drain-Source Resistance	1.7 mOhms
Rise Time	19 ns
RoHS	Details
Series	CSD18509Q5B
Technology	Si
Tradename	NexFET
Transistor Polarity	N-Channel
Transistor Type	1 N-Channel
Typical Turn-Off Delay Time	57 ns
Typical Turn-On Delay Time	9 ns
Vds - Drain-Source Breakdown Voltage	40 V
Vgs - Gate-Source Voltage	+/-20 V
Vgs th - Gate-Source Threshold Voltage	1.4 V
Вес, г	8