2N2222 PBFREE, Bipolar Transistors - BJT NPN Silicon
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см. техническую документацию
см. техническую документацию
2079 шт., срок 7-9 недель
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Альтернативные предложения1
Описание
Semiconductors\Discrete Semiconductors\Transistors\Bipolar Transistors - BJT
Биполярный (BJT) транзистор NPN 30V 800mA 250MHz 500mW Through Hole TO-18
Технические параметры
Brand: | Central Semiconductor |
Collector- Base Voltage VCBO: | 60 V |
Collector- Emitter Voltage VCEO Max: | 30 V |
Collector-Emitter Saturation Voltage: | 1.6 V |
Configuration: | Single |
Continuous Collector Current: | 800 mA |
DC Collector/Base Gain hfe Min: | 100 |
DC Current Gain hFE Max: | 300 |
Emitter- Base Voltage VEBO: | 5 V |
Factory Pack Quantity: Factory Pack Quantity: | 2000 |
Gain Bandwidth Product fT: | 250 MHz |
Manufacturer: | Central Semiconductor |
Maximum DC Collector Current: | 800 mA |
Maximum Operating Temperature: | +200 C |
Minimum Operating Temperature: | -65 C |
Mounting Style: | Through Hole |
Package / Case: | TO-18-3 |
Packaging: | Bulk |
Pd - Power Dissipation: | 500 mW |
Product Category: | Bipolar Transistors-BJT |
Product Type: | BJTs-Bipolar Transistors |
Subcategory: | Transistors |
Transistor Polarity: | NPN |
Current - Collector (Ic) (Max) | 800mA |
Current - Collector Cutoff (Max) | 10nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA, 10V |
ECCN | EAR99 |
Frequency - Transition | 250MHz |
HTSUS | 8541.21.0075 |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Mounting Type | Through Hole |
Operating Temperature | -65В°C ~ 200В°C (TJ) |
Package | Bulk |
Package / Case | TO-206AA, TO-18-3 Metal Can |
Power - Max | 500mW |
REACH Status | REACH Unaffected |
RoHS Status | ROHS3 Compliant |
Supplier Device Package | TO-18 |
Transistor Type | NPN |
Vce Saturation (Max) @ Ib, Ic | 1.6V @ 50mA, 500mA |
Voltage - Collector Emitter Breakdown (Max) | 30V |
Automotive | No |
Configuration | Single |
Diameter | 5.84(Max) |
ECCN (US) | EAR99 |
EU RoHS | Compliant with Exemption |
Lead Shape | Through Hole |
Material | Si |
Maximum Base Emitter Saturation Voltage (V) | 1.3@15mA@150mA|2.6@50mA@500mA |
Maximum Collector Base Voltage (V) | 60 |
Maximum Collector-Emitter Saturation Voltage (V) | 0.4@15mA@150mA|1.6@50mA@500mA |
Maximum Collector-Emitter Voltage (V) | 30 |
Maximum DC Collector Current (A) | 0.8 |
Maximum Emitter Base Voltage (V) | 5 |
Maximum Operating Temperature (°C) | 200 |
Maximum Power Dissipation (mW) | 500 |
Maximum Transition Frequency (MHz) | 250(Min) |
Minimum Operating Temperature (°C) | -65 |
Mounting | Through Hole |
Number of Elements per Chip | 1 |
Part Status | Active |
PCB changed | 3 |
Pin Count | 3 |
PPAP | No |
Product Category | Bipolar Small Signal |
Standard Package Name | TO |
Supplier Package | TO-18 |
Type | NPN |
Вес, г | 1 |
Техническая документация
Datasheet
pdf, 608 КБ
Datasheet 2N2222 PBFREE
pdf, 604 КБ
Дополнительная информация
Калькуляторы группы «Транзисторы биполярные (BJTs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
Сроки доставки
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