2N3702 PBFREE, Bipolar Transistors - BJT PNP -25V -500mA BULK HFE/300

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6370 шт., срок 6-8 недель

160 руб.

от 10 шт. — 140 руб.

от 100 шт. — 86 руб.

от 500 шт. — 80.92 руб.

Добавить в корзину 1 шт. на сумму 160 руб.

Номенклатурный номер: 8005049519

Артикул: 2N3702 PBFREE

Semiconductors\Discrete Semiconductors\Transistors\Bipolar Transistors - BJT

Биполярный (BJT) транзистор PNP 25V 100MHz Through Hole TO-92

Brand:	Central Semiconductor
Collector- Base Voltage VCBO:	40 V
Collector- Emitter Voltage VCEO Max:	25 V
Collector-Emitter Saturation Voltage:	250 mV
Configuration:	Single
Continuous Collector Current:	200 mA
DC Collector/Base Gain hfe Min:	60
DC Current Gain hFE Max:	300
Emitter- Base Voltage VEBO:	5 V
Factory Pack Quantity: Factory Pack Quantity:	2500
Gain Bandwidth Product fT:	100 MHz
Manufacturer:	Central Semiconductor
Maximum DC Collector Current:	200 mA
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-65 C
Mounting Style:	Through Hole
Package / Case:	TO-92
Packaging:	Bulk
Pd - Power Dissipation:	360 mW
Product Category:	Bipolar Transistors-BJT
Product Type:	BJTs-Bipolar Transistors
Subcategory:	Transistors
Transistor Polarity:	PNP
Current - Collector Cutoff (Max)	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	60 @ 50ВµA, 5V
ECCN	EAR99
Frequency - Transition	100MHz
HTSUS	8541.21.0095
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Mounting Type	Through Hole
Package	Bulk
Package / Case	TO-226-3, TO-92-3 (TO-226AA)
REACH Status	REACH Unaffected
RoHS Status	ROHS3 Compliant
Supplier Device Package	TO-92
Transistor Type	PNP
Voltage - Collector Emitter Breakdown (Max)	25V
Вес, г	0.45