DDTA123TCA-7-F, Digital Transistors 200MW 2.2K

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65 руб.

от 10 шт. — 45 руб.

от 100 шт. — 18 руб.

от 1000 шт. — 11.69 руб.

Добавить в корзину 1 шт. на сумму 65 руб.

Номенклатурный номер: 8005058614

Артикул: DDTA123TCA-7-F

Бренд: DIODES INC.

Semiconductors\Discrete Semiconductors\Transistors\Bipolar Transistors - Pre-Biased

Биполярный транзистор с предварительным смещением (BJT) PNP - с предварительным смещением 50 В 100 мА 250 МГц 200 мВт поверхностный монтаж SOT-23-3

Brand:	Diodes Incorporated
Collector- Emitter Voltage VCEO Max:	50 V
Configuration:	Single
Continuous Collector Current:	100 mA
DC Collector/Base Gain hfe Min:	100
Factory Pack Quantity: Factory Pack Quantity:	3000
Manufacturer:	Diodes Incorporated
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	SMD/SMT
Package / Case:	SOT-23-3
Peak DC Collector Current:	100 mA
Product Category:	Bipolar Transistors-Pre-Biased
Product Type:	BJTs-Bipolar Transistors-Pre-Biased
Series:	DDTA123
Subcategory:	Transistors
Transistor Polarity:	PNP
Typical Input Resistor:	2.2 kOhms
Base Product Number	DDTA123 ->
Current - Collector (Ic) (Max)	100mA
Current - Collector Cutoff (Max)	500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 1mA, 5V
ECCN	EAR99
Frequency - Transition	250MHz
HTSUS	8541.21.0075
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Mounting Type	Surface Mount
Package	Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ®
Package / Case	TO-236-3, SC-59, SOT-23-3
Power - Max	200mW
REACH Status	REACH Unaffected
Resistor - Base (R1)	2.2 kOhms
RoHS Status	ROHS3 Compliant
Supplier Device Package	SOT-23-3
Transistor Type	PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic	300mV @ 500ВµA, 5mA
Voltage - Collector Emitter Breakdown (Max)	50V
Вес, г	0.008