DMP6110SSS-13, MOSFET 60V P-Ch 60Vds 20Vgs FET 1030pF 19.4nC
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Описание
Semiconductors\Discrete Semiconductors\Transistors\MOSFET
Power MOSFETsDiodes Incorporated offers a broad range of Power MOSFETs, enabling designers to select a device optimized for their end application, thus enabling next generation consumer, computer and communication product designs. The Diodes portfolio is ideally suited to meeting the circuit requirements of DC-DC conversion, load switching, motor control, backlighting, battery protection, battery chargers, audio circuits, and automotive applications.
Технические параметры
| Brand: | Diodes Incorporated |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 2500 |
| Fall Time: | 26.1 ns |
| Id - Continuous Drain Current: | 4.5 A |
| Manufacturer: | Diodes Incorporated |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | SOIC-8 |
| Pd - Power Dissipation: | 2 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 9.5 nC |
| Rds On - Drain-Source Resistance: | 98 mOhms |
| Rise Time: | 6.3 ns |
| Series: | DMP6110 |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | P-Channel |
| Transistor Type: | 1 P-Channel |
| Typical Turn-Off Delay Time: | 58.7 ns |
| Typical Turn-On Delay Time: | 3.7 ns |
| Vds - Drain-Source Breakdown Voltage: | 60 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 3 V |
| Channel Mode | Enhancement |
| Channel Type | P |
| Forward Diode Voltage | 1.2V |
| Maximum Continuous Drain Current | 4.5 A |
| Maximum Drain Source Resistance | 130 mΩ |
| Maximum Drain Source Voltage | 60 V |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Maximum Gate Threshold Voltage | 3V |
| Maximum Operating Temperature | +150 C |
| Maximum Power Dissipation | 2 W |
| Minimum Gate Threshold Voltage | 1V |
| Minimum Operating Temperature | -55 C |
| Mounting Type | Surface Mount |
| Number of Elements per Chip | 1 |
| Package Type | SOIC |
| Pin Count | 8 |
| Transistor Configuration | Single |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 19.4 nC 10 V |
| Width | 3.95mm |
| Вес, г | 6 |
Техническая документация
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
