DRDNB16W-7, Digital Transistors NPN Trans R1-R2 Switch-Relay Drvr
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Описание
Биполярный транзистор с предварительным смещением (BJT) NPN - с предварительным смещением 50 В, 600 мА, 200 МГц, 200 мВт, поверхностный монтаж SOT-363
Технические параметры
| EU RoHS | Compliant |
| ECCN (US) | EAR99 |
| Part Status | Active |
| HTS | 8541.21.00.95 |
| Type | NPN |
| Configuration | Single |
| Maximum Collector-Emitter Voltage (V) | 50 |
| Maximum Continuous DC Collector Current (mA) | 600 |
| Minimum DC Current Gain | 56@50mA@5V |
| Typical Current Gain Bandwidth (MHz) | 200 |
| Typical Input Resistor (kOhm) | 1 |
| Typical Resistor Ratio | 0.1 |
| Maximum Power Dissipation (mW) | 200 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Operating Temperature (°C) | 150 |
| Packaging | Tape and Reel |
| Automotive | No |
| Standard Package Name | SOT-26 |
| Pin Count | 6 |
| Supplier Package | SOT-363 |
| Military | No |
| Mounting | Surface Mount |
| Package Height | 0.95 |
| Package Length | 2.15 |
| Package Width | 1.3 |
| PCB changed | 6 |
| Lead Shape | Gull-wing |
| Base Product Number | DRDNB16 -> |
| Current - Collector (Ic) (Max) | 600mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 56 @ 50mA, 5V |
| ECCN | EAR99 |
| Frequency - Transition | 200MHz |
| HTSUS | 8541.21.0075 |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Mounting Type | Surface Mount |
| Package | Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ® |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Power - Max | 200mW |
| REACH Status | REACH Unaffected |
| Resistor - Base (R1) | 1 kOhms |
| Resistor - Emitter Base (R2) | 10 kOhms |
| RoHS Status | ROHS3 Compliant |
| Supplier Device Package | SOT-363 |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 2.5mA, 50mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Brand | Diodes Incorporated |
| Collector- Emitter Voltage VCEO Max | 18 V |
| Continuous Collector Current | 600 mA |
| DC Collector/Base Gain Hfe Min | 56 |
| Emitter- Base Voltage VEBO | 5 V |
| Factory Pack Quantity | 3000 |
| Manufacturer | Diodes Incorporated |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | SMD/SMT |
| Pd - Power Dissipation | 200 mW |
| Peak DC Collector Current | 600 mA |
| Product Category | Bipolar Transistors-Pre-Biased |
| Product Type | BJTs-Bipolar Transistors-Pre-Biased |
| Series | DRDNB16 |
| Subcategory | Transistors |
| Transistor Polarity | NPN |
| Typical Input Resistor | 1 kOhms |
| Вес, г | 0.006 |
Техническая документация
Datasheet
pdf, 252 КБ
Datasheet
pdf, 372 КБ
Datasheet DRDNB16W7
pdf, 249 КБ
Datasheet DRDNB16W-7
pdf, 348 КБ
Дополнительная информация
Калькуляторы группы «Транзисторы биполярные (BJTs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
