MMBT4401-13-F, Bipolar Transistors - BJT BIPOLAR TRANSISTOR NPN

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43 руб.
от 10 шт.26 руб.
от 100 шт.13 руб.
от 1000 шт.6.62 руб.
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Номенклатурный номер: 8005060026
Артикул: MMBT4401-13-F
Бренд: DIODES INC.

Описание

Semiconductors\Discrete Semiconductors\Transistors\Bipolar Transistors - BJT
MMBT4401 Bipolar Junction Transistor
Diodes Incorporated MMBT4401 Bipolar Junction Transistor (BJT) with epitaxial planar die construction is a 40V NPN small signal transistor. The MMBT4401 is qualified to AEC-Q101 standards for high reliability, available in the SOT23 package. This transistor is constructed from molded plastic "Green" compound and complies with UL94V-0 flammability rating. Diodes Incorporated MMBT4401 features a wide storage and operating temperature range of -55 C to 150 C. This BJT is RoHS compliant. The MMBT4401 transistor is ideal for medium power amplification and switching.

Технические параметры

Brand: Diodes Incorporated
Collector- Base Voltage VCBO: 60 V
Collector- Emitter Voltage VCEO Max: 40 V
Collector-Emitter Saturation Voltage: 750 mV
Configuration: Single
DC Collector/Base Gain hfe Min: 20 at 100 uA, 1 V
DC Current Gain hFE Max: 300 at 150 mA, 1 V
Emitter- Base Voltage VEBO: 6 V
Factory Pack Quantity: Factory Pack Quantity: 10000
Gain Bandwidth Product fT: 250 MHz
Manufacturer: Diodes Incorporated
Maximum DC Collector Current: 600 mA
Maximum Operating Temperature: +150 C
Minimum Operating Temperature: -55 C
Mounting Style: SMD/SMT
Package / Case: SOT-23-3
Pd - Power Dissipation: 310 mW
Product Category: Bipolar Transistors-BJT
Product Type: BJTs-Bipolar Transistors
Subcategory: Transistors
Technology: Si
Transistor Polarity: NPN
Automotive No
Configuration Single
ECCN (US) EAR99
EU RoHS Compliant
Lead Shape Gull-wing
Maximum Base Emitter Saturation Voltage (V) 1.2@50mA@500mA|0.95@15mA@150mA
Maximum Collector Base Voltage (V) 60
Maximum Collector-Emitter Saturation Voltage (V) 0.75@50mA@500mA|0.4@15mA@150mA
Maximum Collector-Emitter Voltage (V) 40
Maximum DC Collector Current (A) 0.6
Maximum Emitter Base Voltage (V) 6
Maximum Operating Temperature (°C) 150
Maximum Power Dissipation (mW) 350
Maximum Transition Frequency (MHz) 250(Min)
Minimum Operating Temperature (°C) -55
Mounting Surface Mount
Number of Elements per Chip 1
Packaging Tape and Reel
Part Status Active
PCB changed 3
Pin Count 3
PPAP No
Product Category Bipolar Small Signal
Standard Package Name SOT
Supplier Package SOT-23
Supplier Temperature Grade Commercial
Type NPN
Вес, г 0.01

Техническая документация

Datasheet
pdf, 562 КБ
Datasheet
pdf, 253 КБ

Дополнительная информация

Калькуляторы группы «Транзисторы биполярные (BJTs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов