FS25R12W1T4, IGBT Modules N-CH 1.2KV 45A
10 710 руб.
от 10 шт. —
9 360 руб.
от 24 шт. —
8 220 руб.
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на сумму 10 710 руб.
Описание
Semiconductors\Discrete Semiconductors\Transistors\IGBT Modules
Технические параметры
Brand: | Infineon Technologies |
Collector- Emitter Voltage VCEO Max: | 1.2 kV |
Collector-Emitter Saturation Voltage: | 1.85 V |
Configuration: | 6-Pack |
Continuous Collector Current at 25 C: | 45 A |
Factory Pack Quantity: | 24 |
Gate-Emitter Leakage Current: | 400 nA |
Manufacturer: | Infineon |
Maximum Gate Emitter Voltage: | 20 V |
Maximum Operating Temperature: | +150 C |
Minimum Operating Temperature: | -40 C |
Mounting Style: | Chassis Mount |
Package / Case: | EASY1B |
Packaging: | Tray |
Part # Aliases: | SP000255353 FS25R12W1T4BOMA1 |
Pd - Power Dissipation: | 205 W |
Product Category: | IGBT Modules |
Product Type: | IGBT Modules |
Product: | IGBT Silicon Modules |
Subcategory: | IGBTs |
Technology: | Si |
Вес, г | 24 |