IPD30N06S215ATMA2, MOSFET MOSFET_)40V 60V)

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Номенклатурный номер: 8005240569

Артикул: IPD30N06S215ATMA2

Semiconductors\Discrete Semiconductors\Transistors\MOSFET

The Infineon design of MOSFETs, also known as MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’.

Brand:	Infineon Technologies
Channel Mode:	Enhancement
Configuration:	Single
Factory Pack Quantity: Factory Pack Quantity:	2500
Fall Time:	19 ns
Id - Continuous Drain Current:	30 A
Manufacturer:	Infineon
Maximum Operating Temperature:	+175 C
Minimum Operating Temperature:	-55 C
Mounting Style:	SMD/SMT
Number of Channels:	1 Channel
Package / Case:	TO-252-3
Part # Aliases:	IPD30N06S2-15 SP001061724
Pd - Power Dissipation:	136 W
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	41 nC
Qualification:	AEC-Q101
Rds On - Drain-Source Resistance:	11.3 mOhms
Rise Time:	28 ns
Subcategory:	MOSFETs
Technology:	Si
Transistor Polarity:	N-Channel
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	32 ns
Typical Turn-On Delay Time:	13 ns
Vds - Drain-Source Breakdown Voltage:	55 V
Vgs - Gate-Source Voltage:	-20 V, +20 V
Vgs th - Gate-Source Threshold Voltage:	3 V
Channel Mode	Enhancement
Channel Type	N
Maximum Continuous Drain Current	30 A
Maximum Drain Source Resistance	0.0147 Ω
Maximum Drain Source Voltage	55 V
Maximum Gate Threshold Voltage	4V
Mounting Type	Surface Mount
Number of Elements per Chip	1
Package Type	TO-252
Pin Count	3
Series	OptiMOS
Transistor Material	Silicon
Вес, г	0.33