IXFQ140N20X3, MOSFET MSFT N-CH ULTRA JNCT X3 3&44

Изображения служат только для ознакомления,
см. техническую документацию

3 290 руб.

от 10 шт. — 2 760 руб.

от 30 шт. — 2 370 руб.

от 60 шт. — 2 363.21 руб.

Добавить в корзину 1 шт. на сумму 3 290 руб.

Номенклатурный номер: 8005249973

Артикул: IXFQ140N20X3

Описание Транзистор: N-MOSFET, X3-Class, полевой, 200В, 140А, 520Вт, TO3P Характеристики

California Prop 65	Warning Information
Current - Continuous Drain (Id) @ 25В°C	140A (Tc)
Drain to Source Voltage (Vdss)	200V
Drive Voltage (Max Rds On, Min Rds On)	10V
ECCN	EAR99
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	127nC @ 10V
HTSUS	8541.29.0095
Input Capacitance (Ciss) (Max) @ Vds	7660pF @ 25V
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Mounting Type	Through Hole
Operating Temperature	-55В°C ~ 150В°C (TJ)
Package	Tube
Package / Case	TO-3P-3, SC-65-3
Power Dissipation (Max)	520W (Tc)
Rds On (Max) @ Id, Vgs	9.6mOhm @ 70A, 10V
REACH Status	REACH Unaffected
RoHS Status	ROHS3 Compliant
Series	HiPerFETв„ў ->
Supplier Device Package	TO-3P
Technology	MOSFET (Metal Oxide)
Vgs (Max)	В±20V
Vgs(th) (Max) @ Id	4.5V @ 4mA
Case	TO3P
Drain current	140A
Drain-source voltage	200V
Gate charge	127nC
Gate-source voltage	±20V
Kind of channel	enhanced
Kind of package	tube
Manufacturer	IXYS
Mounting	THT
On-state resistance	9.6mΩ
Polarisation	unipolar
Power dissipation	520W
Reverse recovery time	90ns
Type of transistor	N-MOSFET
Вес, г	5.5