MMIX4G20N250, IGBT Modules IGBT SMPD PKG-STANDARD
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Описание
Semiconductors\Discrete Semiconductors\Transistors\IGBT Modules
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Технические параметры
Brand: | IXYS |
Collector- Emitter Voltage VCEO Max: | 2.5 kV |
Collector-Emitter Saturation Voltage: | 3.1 V |
Configuration: | Half Bridge |
Continuous Collector Current at 25 C: | 23 A |
Factory Pack Quantity: | 20 |
Gate-Emitter Leakage Current: | 100 nA |
Manufacturer: | IXYS |
Maximum Gate Emitter Voltage: | 20 V |
Maximum Operating Temperature: | +150 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | SMD/SMT |
Package/Case: | SMPD-24 |
Packaging: | Tube |
Pd - Power Dissipation: | 100 W |
Product Category: | IGBT Modules |
Product Type: | IGBT Modules |
Product: | IGBT Silicon Modules |
Subcategory: | IGBTs |
Technology: | Si |
Вес, г | 8 |
Техническая документация
Datasheet
pdf, 1330 КБ