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RCX511N25, MOSFET 10V Drive Nch MOSFET

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438 шт., срок 6-8 недель

890 руб.

от 10 шт. — 710 руб.

от 100 шт. — 507 руб.

от 250 шт. — 503.80 руб.

Добавить в корзину 1 шт. на сумму 890 руб.

Номенклатурный номер: 8005264970

Артикул: RCX511N25

Бренд: Rohm

Описание

Semiconductors\Discrete Semiconductors\Transistors\MOSFET

Silicon Power MOSFETs ROHM Semiconductor Silicon Power MOSFETs feature ultra-fast switching speeds and low on-resistance. These MOSFETs are available in a wide lineup of packages, including the miniature 0604 size to save space in various designs.

Технические параметры

Brand:	ROHM Semiconductor
Channel Mode:	Enhancement
Configuration:	Single
Factory Pack Quantity:	500
Fall Time:	210 ns
Id - Continuous Drain Current:	51 A
Manufacturer:	ROHM Semiconductor
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	Through Hole
Number of Channels:	1 Channel
Package/Case:	TO-220-3
Packaging:	Reel, Cut Tape
Pd - Power Dissipation:	84 W
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	120 nC
Rds On - Drain-Source Resistance:	48 mOhms
Rise Time:	300 ns
Subcategory:	MOSFETs
Technology:	Si
Transistor Polarity:	N-Channel
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	170 ns
Typical Turn-On Delay Time:	65 ns
Vds - Drain-Source Breakdown Voltage:	250 V
Vgs - Gate-Source Voltage:	-30 V, +30 V
Vgs th - Gate-Source Threshold Voltage:	3 V
Вес, г	2