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SSM3J334R,LF, MOSFET P-Ch U-MOSVI FET ID -4A -30VDSS 280pF

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163312 шт., срок 7-9 недель

120 руб.

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Альтернативные предложения1

Номенклатурный номер: 8005268604

Артикул: SSM3J334R,LF

Бренд: Toshiba

Описание

Semiconductors\Discrete Semiconductors\Transistors\MOSFET

U-MOSVI Small Signal MOSFETs Toshiba U-MOSVI Small Signal MOSFETs offer a variety of gate drive voltages required for many different types of mobile devices. They are available in single, dual, N-channel, P-channel and various voltage versions, providing a wide variety of options for designers. Each MOSFET addresses the need to support high-current charging with low voltage and low RDS(on) requirements. The compact packages and and low voltage operation make Toshiba U-MOSVI Small Signal MOSFETs an ideal solution for high-density packaging requirements in smart phones and game consoles.

Технические параметры

Brand:	Toshiba
Channel Mode:	Enhancement
Configuration:	Single
Factory Pack Quantity:	3000
Forward Transconductance - Min:	2.3 S
Id - Continuous Drain Current:	4 A
Manufacturer:	Toshiba
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	SMD/SMT
Number of Channels:	1 Channel
Package/Case:	SOT-23F-3
Pd - Power Dissipation:	1 W
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	5.9 nC
Rds On - Drain-Source Resistance:	136 mOhms
Subcategory:	MOSFETs
Technology:	Si
Transistor Polarity:	P-Channel
Transistor Type:	1 P-Channel
Typical Turn-Off Delay Time:	22 ns
Typical Turn-On Delay Time:	13 ns
Vds - Drain-Source Breakdown Voltage:	30 V
Vgs - Gate-Source Voltage:	-20 V, +20 V
Vgs th - Gate-Source Threshold Voltage:	800 mV
Base Product Number	TB62261 ->
Current - Continuous Drain (Id) @ 25В°C	4A (Ta)
Drain to Source Voltage (Vdss)	30V
Drive Voltage (Max Rds On, Min Rds On)	4V, 10V
ECCN	EAR99
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	5.9nC @ 10V
HTSUS	8541.29.0095
Input Capacitance (Ciss) (Max) @ Vds	280pF @ 15V
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Mounting Type	Surface Mount
Operating Temperature	150В°C (TJ)
Package	Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ®
Package / Case	SOT-23-3 Flat Leads
Power Dissipation (Max)	1W (Ta)
Rds On (Max) @ Id, Vgs	71mOhm @ 3A, 10V
RoHS Status	RoHS Compliant
Series	U-MOSVI ->
Supplier Device Package	SOT-23F
Technology	MOSFET (Metal Oxide)
Vgs (Max)	В±20V
Vgs(th) (Max) @ Id	2V @ 100ВµA
Вес, г	0.01