Главная › Электронные компоненты › Транзисторы › Полевые (FETs, MOSFETs) › Toshiba › SSM3J353F,LF, MOSFET Small-signal MOSFET ID ...

SSM3J353F,LF, MOSFET Small-signal MOSFET ID -2A, VDSS -30V

Изображения служат только для ознакомления,
см. техническую документацию

6888 шт., срок 7-9 недель

140 руб.

Добавить в корзину 1 шт. на сумму 140 руб.

Альтернативные предложения1

Номенклатурный номер: 8005268608

Артикул: SSM3J353F,LF

Бренд: Toshiba

Описание

Semiconductors\Discrete Semiconductors\Transistors\MOSFET

SSM3 High Current MOSFETs Toshiba SSM3 High Current MOSFETs provide a high drain current rating, low capacitance, low on-resistance, and fast switching. Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) are semiconductor devices used for switching and amplifying electronic signals in electronic devices. Toshiba SSM3 High Current MOSFETs are ideal for mobile devices (wearable devices, smartphones, tablet PCs, etc.), load switches, DC-DC converters, and general-purpose switches.

Технические параметры

Brand:	Toshiba
Channel Mode:	Enhancement
Configuration:	Single
Factory Pack Quantity:	3000
Id - Continuous Drain Current:	2 A
Manufacturer:	Toshiba
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	SMD/SMT
Number of Channels:	1 Channel
Package/Case:	SOT-346-3
Pd - Power Dissipation:	1.2 W
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	3.4 nC
Rds On - Drain-Source Resistance:	125 mOhms
Subcategory:	MOSFETs
Technology:	Si
Transistor Polarity:	P-Channel
Transistor Type:	1 P-Channel
Typical Turn-Off Delay Time:	34 ns
Typical Turn-On Delay Time:	30 ns
Vds - Drain-Source Breakdown Voltage:	30 V
Vgs - Gate-Source Voltage:	-20 V, +20 V
Vgs th - Gate-Source Threshold Voltage:	2.2 V
Base Product Number	2SC3668 ->
Current - Continuous Drain (Id) @ 25В°C	2A (Ta)
Drain to Source Voltage (Vdss)	30V
Drive Voltage (Max Rds On, Min Rds On)	4V, 10V
ECCN	EAR99
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	3.4nC @ 4.5V
HTSUS	8541.21.0095
Input Capacitance (Ciss) (Max) @ Vds	159pF @ 15V
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Mounting Type	Surface Mount
Operating Temperature	150В°C
Package	Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ®
Package / Case	TO-236-3, SC-59, SOT-23-3
Power Dissipation (Max)	600mW (Ta)
Rds On (Max) @ Id, Vgs	150mOhm @ 2A, 10V
RoHS Status	RoHS Compliant
Series	U-MOSVI ->
Supplier Device Package	S-Mini
Technology	MOSFET (Metal Oxide)
Vgs (Max)	+20V, -25V
Vgs(th) (Max) @ Id	2.2V @ 250ВµA
Вес, г	0.01