SSM3J358R,LF, MOSFET LowON Res MOSFET ID=-6A VDSS=-20V
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Описание
Semiconductors\Discrete Semiconductors\Transistors\MOSFET
U-MOSVII MOSFETs Toshiba U-MOSVII MOSFETs are single and dual P-channel MOSFETs with low voltage gate drive and low drain-source on-resistance. These Toshiba devices have a drain-source voltage range of -12V to -20V and a continuous drain current range from -1A to +14A. The U-MOSVII MOSFETs are offered in a wide range of package types for design flexibility.
Технические параметры
Brand: | Toshiba |
Channel Mode: | Enhancement |
Configuration: | Single |
Factory Pack Quantity: | 3000 |
Forward Transconductance - Min: | 12.3 S |
Id - Continuous Drain Current: | 6 A |
Manufacturer: | Toshiba |
Maximum Operating Temperature: | +150 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | SMD/SMT |
Number of Channels: | 1 Channel |
Package/Case: | SOT-23F-3 |
Pd - Power Dissipation: | 2 W |
Product Category: | MOSFET |
Product Type: | MOSFET |
Qg - Gate Charge: | 38.5 nC |
Rds On - Drain-Source Resistance: | 17.5 mOhms |
Subcategory: | MOSFETs |
Technology: | Si |
Transistor Polarity: | P-Channel |
Transistor Type: | 1 P-Channel |
Typical Turn-Off Delay Time: | 393 ns |
Typical Turn-On Delay Time: | 35 ns |
Vds - Drain-Source Breakdown Voltage: | 20 V |
Vgs - Gate-Source Voltage: | -10 V, +10 V |
Vgs th - Gate-Source Threshold Voltage: | 1 V |
Brand | Toshiba |
Channel Mode | Enhancement |
Configuration | Single |
Factory Pack Quantity | 3000 |
Forward Transconductance - Min | 12.3 S |
Id - Continuous Drain Current | -6 A |
Manufacturer | Toshiba |
Maximum Operating Temperature | +150 C |
Mounting Style | SMD/SMT |
Number of Channels | 1 Channel |
Package / Case | SOT-23F-3 |
Packaging | MouseReel |
Pd - Power Dissipation | 2 W |
Product Category | MOSFET |
Qg - Gate Charge | 38.5 nC |
Rds On - Drain-Source Resistance | 17.5 mOhms |
RoHS | Details |
Technology | Si |
Transistor Polarity | P-Channel |
Transistor Type | 1 P-Channel |
Typical Turn-Off Delay Time | 393 ns |
Typical Turn-On Delay Time | 35 ns |
Vds - Drain-Source Breakdown Voltage | -20 V |
Vgs - Gate-Source Voltage | 10 V |
Vgs th - Gate-Source Threshold Voltage | -1 V |
Вес, г | 0.01 |
Техническая документация
Datasheet SSM3J358R.LF
pdf, 374 КБ
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
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