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SSM3J35AMFV,L3F, MOSFET LowON Res MOSFET ID=-.25A VDSS=-20V

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49086 шт., срок 7-9 недель

68 руб.

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Номенклатурный номер: 8005268612

Артикул: SSM3J35AMFV,L3F

Бренд: Toshiba

Описание

Semiconductors\Discrete Semiconductors\Transistors\MOSFET

U-MOSVII MOSFETs Toshiba U-MOSVII MOSFETs are single and dual P-channel MOSFETs with low voltage gate drive and low drain-source on-resistance. These Toshiba devices have a drain-source voltage range of -12V to -20V and a continuous drain current range from -1A to +14A. The U-MOSVII MOSFETs are offered in a wide range of package types for design flexibility.

Технические параметры

Brand:	Toshiba
Channel Mode:	Enhancement
Configuration:	Single
Factory Pack Quantity:	8000
Fall Time:	145 ns
Forward Transconductance - Min:	430 mS
Id - Continuous Drain Current:	250 mA
Manufacturer:	Toshiba
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	SMD/SMT
Number of Channels:	1 Channel
Package/Case:	SOT-723-3
Pd - Power Dissipation:	500 mW
Product Category:	MOSFET
Product Type:	MOSFET
Rds On - Drain-Source Resistance:	1.1 Ohms
Rise Time:	42 ns
Subcategory:	MOSFETs
Technology:	Si
Transistor Polarity:	P-Channel
Transistor Type:	1 P-Channel
Typical Turn-Off Delay Time:	420 ns
Typical Turn-On Delay Time:	17 ns
Vds - Drain-Source Breakdown Voltage:	20 V
Vgs - Gate-Source Voltage:	-10 V, +10 V
Vgs th - Gate-Source Threshold Voltage:	1 V
Вес, г	0.024