SSM3K122TU,LF, MOSFET Small Signal MOSFET N-ch VDSS=20V, VGSS=+/-10V, ID=2.0A, RDS(ON)=0.123Ohm a. 4V, in UFM package
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Описание
Semiconductors\Discrete Semiconductors\Transistors\MOSFET
U-MOSIII MOSFETs Toshiba U-MOSIII MOSFETs are single- and dual-channel MOSFETs ideal for high-speed switching applications. These Toshiba MOSFETs offer a low drain to source on-resistance and a low voltage gate drive.
Технические параметры
| Brand: | Toshiba |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: | 3000 |
| Id - Continuous Drain Current: | 2 A |
| Manufacturer: | Toshiba |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package/Case: | UFM-3 |
| Pd - Power Dissipation: | 500 mW |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 3.4 nC |
| Qualification: | AEC-Q101 |
| Rds On - Drain-Source Resistance: | 123 mOhms |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 9 ns |
| Typical Turn-On Delay Time: | 8 ns |
| Vds - Drain-Source Breakdown Voltage: | 20 V |
| Vgs - Gate-Source Voltage: | -10 V, +10 V |
| Vgs th - Gate-Source Threshold Voltage: | 1 V |
| Base Product Number | RN1313 -> |
| Current - Continuous Drain (Id) @ 25В°C | 2A (Ta) |
| Drain to Source Voltage (Vdss) | 20V |
| Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4V |
| ECCN | EAR99 |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 3.4nC @ 4V |
| HTSUS | 8541.21.0095 |
| Input Capacitance (Ciss) (Max) @ Vds | 195pF @ 10V |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Mounting Type | Surface Mount |
| Operating Temperature | 150В°C |
| Package | Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ® |
| Package / Case | 3-SMD, Flat Lead |
| Power Dissipation (Max) | 500mW (Ta) |
| Rds On (Max) @ Id, Vgs | 123mOhm @ 1A, 4V |
| RoHS Status | RoHS non-compliant |
| Supplier Device Package | UFM |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | В±10V |
| Vgs(th) (Max) @ Id | 1V @ 1mA |
| Вес, г | 0.01 |
Техническая документация
Datasheet SSM3K122TU,LF
pdf, 328 КБ
Datasheet SSM3K122TU.LF
pdf, 329 КБ
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
Сроки доставки
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