Главная › Электронные компоненты › Транзисторы › Полевые (FETs, MOSFETs) › Toshiba › SSM3K15AFU,LF, MOSFET Small-Signal MOSFET

SSM3K15AFU,LF, MOSFET Small-Signal MOSFET

Изображения служат только для ознакомления,
см. техническую документацию

104547 шт., срок 7-9 недель

70 руб.

Добавить в корзину 1 шт. на сумму 70 руб.

Альтернативные предложения1

Номенклатурный номер: 8005268627

Артикул: SSM3K15AFU,LF

Бренд: Toshiba

Описание

Semiconductors\Discrete Semiconductors\Transistors\MOSFET

U-MOSIII MOSFETs Toshiba U-MOSIII MOSFETs are single- and dual-channel MOSFETs ideal for high-speed switching applications. These Toshiba MOSFETs offer a low drain to source on-resistance and a low voltage gate drive.

Технические параметры

Brand:	Toshiba
Channel Mode:	Enhancement
Configuration:	Single
Factory Pack Quantity:	3000
Id - Continuous Drain Current:	100 mA
Manufacturer:	Toshiba
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	SMD/SMT
Number of Channels:	1 Channel
Package/Case:	SOT-323-3
Pd - Power Dissipation:	150 mW
Product Category:	MOSFET
Product Type:	MOSFET
Rds On - Drain-Source Resistance:	3.6 Ohms
Subcategory:	MOSFETs
Technology:	Si
Transistor Polarity:	N-Channel
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	35 ns
Typical Turn-On Delay Time:	5.5 ns
Vds - Drain-Source Breakdown Voltage:	30 V
Vgs - Gate-Source Voltage:	-20 V, +20 V
Vgs th - Gate-Source Threshold Voltage:	800 mV
Continuous Drain Current (Id) @ 25В°C	100mA
Power Dissipation-Max (Ta=25В°C)	150mW
Rds On - Drain-Source Resistance	3.6О© @ 10mA,4V
Transistor Polarity	N Channel
Vds - Drain-Source Breakdown Voltage	30V
Vgs - Gate-Source Voltage	1.5V @ 100uA
Вес, г	0.01