SSM3K336R,LF, MOSFET Small Signal Mosfet
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Описание
Semiconductors\Discrete Semiconductors\Transistors\MOSFET
U-MOSVII-H MOSFETs Toshiba U-MOSVII-H MOSFETs are logic-level gate drive and low-voltage gate drive devices offered in both single-channel and dual-channel variants. These devices have a drain-source voltage range of 12V to 60V and a continuous drain current range from 0.15m to 9.0A. Toshiba U-MOSVII-H MOSFETs are offered in a wide range of compact, surface-mounted package types, making them ideal for high-density applications.
Технические параметры
| Brand: | Toshiba |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: | 3000 |
| Fall Time: | 8 ns |
| Forward Transconductance - Min: | 5 S |
| Id - Continuous Drain Current: | 3 A |
| Manufacturer: | Toshiba |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package/Case: | SOT-23F-3 |
| Packaging: | Reel, Cut Tape |
| Pd - Power Dissipation: | 2 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 1.7 nC |
| Qualification: | AEC-Q101 |
| Rds On - Drain-Source Resistance: | 95 mOhms |
| Rise Time: | 7 ns |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 8 ns |
| Typical Turn-On Delay Time: | 7 ns |
| Vds - Drain-Source Breakdown Voltage: | 30 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 1.3 V |
| Continuous Drain Current (Id) | 3A |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 67Ω@10V, 2A |
| Drain Source Voltage (Vdss) | 30V |
| Gate Threshold Voltage (Vgs(th)@Id) | 2.5V@0.1mA |
| Input Capacitance (Ciss@Vds) | 126pF@15V |
| Operating Temperature | -55℃~+150℃@(Tj) |
| Power Dissipation (Pd) | 2W |
| Reverse Transfer Capacitance (Crss@Vds) | 8pF@15V |
| Total Gate Charge (Qg@Vgs) | 1.7nC@4.5V |
| Type | N Channel |
| Вес, г | 0.01 |
Техническая документация
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
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