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SSM6N40TU,LF, MOSFET Small Signal MOSFET N-ch x 2 VDSS=30V, VGSS=+/-20V, ID=1.6A, RDS(ON)=0.182Ohm a. 4V, in UF6 package

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3017 шт., срок 6-8 недель

140 руб.

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Альтернативные предложения2

Номенклатурный номер: 8005268699

Артикул: SSM6N40TU,LF

Бренд: Toshiba

Описание

Semiconductors\Discrete Semiconductors\Transistors\MOSFET

U-MOSIII MOSFETs Toshiba U-MOSIII MOSFETs are single- and dual-channel MOSFETs ideal for high-speed switching applications. These Toshiba MOSFETs offer a low drain to source on-resistance and a low voltage gate drive.

Технические параметры

Brand:	Toshiba
Channel Mode:	Enhancement
Configuration:	Single
Factory Pack Quantity:	3000
Id - Continuous Drain Current:	1.6 A
Manufacturer:	Toshiba
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	SMD/SMT
Number of Channels:	1 Channel
Package/Case:	UF-6
Pd - Power Dissipation:	500 mW
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	5.1 nC
Qualification:	AEC-Q101
Rds On - Drain-Source Resistance:	122 mOhms
Subcategory:	MOSFETs
Technology:	Si
Transistor Polarity:	N-Channel
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	9 ns
Typical Turn-On Delay Time:	9.5 ns
Vds - Drain-Source Breakdown Voltage:	30 V
Vgs - Gate-Source Voltage:	-20 V, +20 V
Vgs th - Gate-Source Threshold Voltage:	2.6 V
Base Product Number	2SK2034 ->
Current - Continuous Drain (Id) @ 25В°C	1.6A (Ta)
Drain to Source Voltage (Vdss)	30V
ECCN	EAR99
FET Feature	Logic Level Gate, 4V Drive
FET Type	2 N-Channel (Dual)
Gate Charge (Qg) (Max) @ Vgs	5.1nC @ 10V
HTSUS	8541.21.0095
Input Capacitance (Ciss) (Max) @ Vds	180pF @ 15V
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Mounting Type	Surface Mount
Operating Temperature	150В°C
Package	Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ®
Package / Case	6-SMD, Flat Leads
Power - Max	500mW (Ta)
Rds On (Max) @ Id, Vgs	122mOhm @ 1A, 10V
RoHS Status	RoHS non-compliant
Supplier Device Package	UF6
Vgs(th) (Max) @ Id	2.6V @ 1mA
Вес, г	0.01