BFU550WX, RF Bipolar Transistors Dual NPN wideband Silicon RFtransistor

BFU550WX, RF Bipolar Transistors Dual NPN wideband Silicon RFtransistor
Изображения служат только для ознакомления,
см. техническую документацию
180 руб.
от 10 шт.160 руб.
от 100 шт.117 руб.
от 500 шт.96 руб.
Добавить в корзину 1 шт. на сумму 180 руб.
Номенклатурный номер: 8005273911
Артикул: BFU550WX
Бренд: NXP Semiconductor

Описание

Semiconductors\Discrete Semiconductors\Transistors\RF Transistors
BFU5x NPN Wideband Silicon RF Transistors Nexperia BFU5x NPN Wideband Silicon RF Transistors are AEC-Q101 qualified, low noise, high breakdown RF transistors suitable for small signal to medium power applications up to 2GHz. Offering exceptional performance, BFU5x RF Transistors generate 20dB of maximum gain and a noise figure of 0.7dB at 900MHz. These devices allow for better signal reception at low to medium power and enable RF receivers to operate more robustly in noisy environments. When used as (low-noise) amplifiers or oscillators, BFU5x RF Transistors support high supply voltages and high breakdown voltages. This makes these devices well-suited for automotive, communication, and industrial applications. The product family is available in a wide range of industry-standard packages, including SOT323, SOT23, and SOT143.

Технические параметры

Brand: NXP Semiconductors
Collector- Base Voltage VCBO: 24 V
Collector- Emitter Voltage VCEO Max: 12 V
Configuration: Single
Continuous Collector Current: 50 mA
DC Collector/Base Gain hfe Min: 60
DC Current Gain hFE Max: 200
Emitter- Base Voltage VEBO: 2 V
Factory Pack Quantity: 3000
Gain Bandwidth Product fT: 11 GHz
Manufacturer: NXP
Maximum DC Collector Current: 80 mA
Maximum Operating Temperature: +150 C
Minimum Operating Temperature: -40 C
Mounting Style: SMD/SMT
Operating Frequency: 11 GHz
Operating Temperature Range: -40 C to+150 C
Output Power: 13.5 dBm
Package / Case: SOT-323-3
Part # Aliases: 934067695115
Pd - Power Dissipation: 450 mW
Product Category: RF Bipolar Transistors
Product Type: RF Bipolar Transistors
Subcategory: Transistors
Technology: Si
Transistor Polarity: NPN
Transistor Type: Bipolar Wideband
Type: Wideband RF Transistor
Вес, г 0.01

Техническая документация

Datasheet
pdf, 307 КБ

Дополнительная информация

Калькуляторы группы «Транзисторы биполярные (BJTs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов