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BUK9M3R3-40HX, MOSFET BUK9M3R3-40H/ SOT1210/mLFPAK

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29580 шт., срок 6-8 недель

450 руб.

от 10 шт. — 330 руб.

от 100 шт. — 266 руб.

от 250 шт. — 239 руб.

Добавить в корзину 1 шт. на сумму 450 руб.

Альтернативные предложения2

Номенклатурный номер: 8005274357

Артикул: BUK9M3R3-40HX

Бренд: Nexperia B.V.

Описание

Semiconductors\Discrete Semiconductors\Transistors\MOSFET

LFPAK33 Trench 9 Automotive MOSFETs Nexperia LFPAK33 Trench 9 Automotive MOSFETs are a portfolio of low RDS(on) 40V AEC-Q101 MOSFETs for modules in demanding powertrain applications. The devices are housed in the miniature, LFPAK33 package with a footprint of only 10.9mm². The LFPAK33 MOSFETs use Nexperia's Trench 9 technology. This results in a 48% reduction in RDS(on) when compared to previous devices. These devices cover a range of applications from 30W up to 300W. BUK7M3R3-40H and BUK9M3R3-40H (Standard Level and Logic Level) devices feature a 3.3mΩ RDS(on).

Технические параметры

Brand:	Nexperia
Channel Mode:	Enhancement
Configuration:	Single
Factory Pack Quantity:	1500
Fall Time:	11 ns
Id - Continuous Drain Current:	80 A
Manufacturer:	Nexperia
Maximum Operating Temperature:	+175 C
Minimum Operating Temperature:	-55 C
Mounting Style:	SMD/SMT
Number of Channels:	1 Channel
Package/Case:	LFPAK-33-8
Part # Aliases:	934660791115
Pd - Power Dissipation:	101 W
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	55 nC
Rds On - Drain-Source Resistance:	3.3 mOhms
Rise Time:	20 ns
Subcategory:	MOSFETs
Technology:	Si
Transistor Polarity:	N-Channel
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	17 ns
Typical Turn-On Delay Time:	16 ns
Vds - Drain-Source Breakdown Voltage:	40 V
Vgs - Gate-Source Voltage:	-10 V, +16 V
Vgs th - Gate-Source Threshold Voltage:	1.45 V
Continuous Drain Current (Id)	80A
Drain Source On Resistance (RDS(on)@Vgs,Id)	3.3mΩ@25A, 10V
Drain Source Voltage (Vdss)	40V
Gate Threshold Voltage (Vgs(th)@Id)	2.15V@1mA
Input Capacitance (Ciss@Vds)	3.766nF@25V
Operating Temperature	-55℃~+175℃@(Tj)
Power Dissipation (Pd)	101W
Reverse Transfer Capacitance (Crss@Vds)	-
Total Gate Charge (Qg@Vgs)	55nC@10V
Type	null
Вес, г	68