PHE13003C,126, Bipolar Transistors - BJT Single NPN 1.5A 2.1W

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242 шт., срок 7-9 недель

130 руб.

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от 100 шт. — 40 руб.

Добавить в корзину 1 шт. на сумму 130 руб.

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Номенклатурный номер: 8005277941

Артикул: PHE13003C,126

Semiconductors\Discrete Semiconductors\Transistors\Bipolar Transistors - BJT

Биполярный (BJT) транзистор NPN 400V 1.5A 2.1W Through Hole TO-92-3

Brand:	WeEn Semiconductors
Collector- Base Voltage VCBO:	700 V
Collector- Emitter Voltage VCEO Max:	400 V
Collector-Emitter Saturation Voltage:	1.5 V
Configuration:	Single
DC Collector/Base Gain hFE Min:	5
DC Current Gain hFE Max:	25
Emitter- Base Voltage VEBO:	9 V
Factory Pack Quantity:	10000
Manufacturer:	WeEn Semiconductors
Maximum DC Collector Current:	1.5 A
Maximum Operating Temperature:	+150 C
Mounting Style:	Through Hole
Package/Case:	TO-92-3
Part # Aliases:	934063922126
Pd - Power Dissipation:	2.1 W
Product Category:	Bipolar Transistors-BJT
Product Type:	BJTs-Bipolar Transistors
Subcategory:	Transistors
Technology:	Si
Transistor Polarity:	NPN
Current - Collector (Ic) (Max)	1.5A
Current - Collector Cutoff (Max)	100ВµA
DC Current Gain (hFE) (Min) @ Ic, Vce	5 @ 1A, 2V
ECCN	EAR99
HTSUS	8541.29.0095
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Mounting Type	Through Hole
Operating Temperature	150В°C (TJ)
Package	Cut Tape (CT)Tape & Box (TB)
Package / Case	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Power - Max	2.1W
RoHS Status	RoHS Compliant
Supplier Device Package	TO-92-3
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	1.5V @ 500mA, 1.5A
Voltage - Collector Emitter Breakdown (Max)	400V
Вес, г	0.45