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SISS26DN-T1-GE3, MOSFET 60V Vds 20V Vgs PowerPAK 1212-8S

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490 руб.

от 10 шт. — 380 руб.

от 100 шт. — 281 руб.

от 500 шт. — 220.80 руб.

Добавить в корзину 1 шт. на сумму 490 руб.

Номенклатурный номер: 8005290248

Артикул: SISS26DN-T1-GE3

Бренд: VISHAY INTERTECHNOLOGY INC.

Описание

Semiconductors\Discrete Semiconductors\Transistors\MOSFET

TrenchFET® Gen IV MOSFETs Vishay / Siliconix TrenchFET® Gen IV MOSFETs offer industry-low on-resistance and low total gate charge in the PowerPAK® SO-8 and 1212-8S packages. These TrenchFET Gen IV MOSFETs feature extremely low RDS(on) that translates to lower conduction losses for reduced power consumption. The TrenchFET MOSFETs also come with space-saving PowerPAK® 1212-8 packages with similar efficiency with a third of its size. Typical applications include high-power DC/DC converters, synchronous rectification, solar micro-inverters, and motor drive switches.

Технические параметры

Brand:	Vishay/Siliconix
Channel Mode:	Enhancement
Configuration:	Single
Factory Pack Quantity:	3000
Fall Time:	9 ns
Id - Continuous Drain Current:	60 A
Manufacturer:	Vishay
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	SMD/SMT
Number of Channels:	1 Channel
Package/Case:	PowerPAK-1212-8S-8
Pd - Power Dissipation:	57 W
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	24.5 nC
Rds On - Drain-Source Resistance:	3.7 mOhms
Rise Time:	22 ns
Subcategory:	MOSFETs
Technology:	Si
Transistor Polarity:	N-Channel
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	14 ns
Typical Turn-On Delay Time:	10 ns
Vds - Drain-Source Breakdown Voltage:	60 V
Vgs - Gate-Source Voltage:	-20 V, +20 V
Vgs th - Gate-Source Threshold Voltage:	3.6 V
Вес, г	0.49