Главная › Электронные компоненты › Транзисторы › Полевые (FETs, MOSFETs) › Vishay › SQM40081EL_GE3, MOSFET 40V Vds 20V Vgs TO-263

SQM40081EL_GE3, MOSFET 40V Vds 20V Vgs TO-263

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480 руб.

от 10 шт. — 380 руб.

от 100 шт. — 296 руб.

от 250 шт. — 265.94 руб.

Добавить в корзину 1 шт. на сумму 480 руб.

Номенклатурный номер: 8005290911

Артикул: SQM40081EL_GE3

Бренд: VISHAY INTERTECHNOLOGY INC.

Описание

Semiconductors\Discrete Semiconductors\Transistors\MOSFET

48V DC/DC Converters Vishay 48V DC/DC Converters are used in the products that need to remain 12V battery load while 48V battery is used in the vehicles. These converters can bring down 48V-12V, so the converter is a significant application for future cars. Different topologies are made possible with these devices like multiphase coupled and non-coupled inductors. Vishay offers a broad portfolio of solutions with standard devices like MOSFETs, diodes, resistors, capacitors, inductors, and customized magnetic solutions.

Технические параметры

Brand:	Vishay/Siliconix
Channel Mode:	Enhancement
Configuration:	Single
Factory Pack Quantity:	800
Fall Time:	153 ns
Forward Transconductance - Min:	92 S
Id - Continuous Drain Current:	50 A
Manufacturer:	Vishay
Maximum Operating Temperature:	+175 C
Minimum Operating Temperature:	-55 C
Mounting Style:	SMD/SMT
Number of Channels:	1 Channel
Package/Case:	D2PAK-3(TO-263-3)
Packaging:	Reel, Cut Tape
Pd - Power Dissipation:	107 W
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	230 nC
Rds On - Drain-Source Resistance:	8.5 mOhms
Rise Time:	230 ns
Subcategory:	MOSFETs
Technology:	Si
Transistor Polarity:	P-Channel
Transistor Type:	1 P-Channel
Typical Turn-Off Delay Time:	103 ns
Typical Turn-On Delay Time:	16 ns
Vds - Drain-Source Breakdown Voltage:	40 V
Vgs - Gate-Source Voltage:	-20 V, +20 V
Vgs th - Gate-Source Threshold Voltage:	2.5 V
Вес, г	4