VS-GT100DA120UF, IGBT Modules 1200V, 100A IGBT SOT-227 Bplr Tnstr

VS-GT100DA120UF, IGBT Modules 1200V, 100A IGBT SOT-227 Bplr Tnstr
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10 940 руб.
от 10 шт.8 830 руб.
от 25 шт.7 730 руб.
от 50 шт.7 470.81 руб.
Добавить в корзину 1 шт. на сумму 10 940 руб.
Номенклатурный номер: 8005293208
Артикул: VS-GT100DA120UF

Описание

Semiconductors\Discrete Semiconductors\Transistors\IGBT Modules
IGBT Power Modules Vishay IGBT Power Modules feature trench PT IGBT technology and are geared toward TIG welding machines. These IGBTs combine Hexfred and Fret PT diode technology and meet UL standards. Features like INT-A-PAK allow for designs with limited height requirements on the board that need high voltages and currents. These modules are also used in applications like appliance motor drives, electric vehicle motor drives, solar inverters, UPS and power factor correction converters. Learn More

Технические параметры

Brand: Vishay Semiconductors
Collector- Emitter Voltage VCEO Max: 1.2 kV
Configuration: Single
Continuous Collector Current at 25 C: 187 A
Factory Pack Quantity: 160
Gate-Emitter Leakage Current: 220 nA
Manufacturer: Vishay
Maximum Operating Temperature: +150 C
Minimum Operating Temperature: -40 C
Mounting Style: SMD/SMT
Package/Case: SOT-227-4
Pd - Power Dissipation: 890 W
Product Category: IGBT Modules
Product Type: IGBT Modules
Product: IGBT Silicon Modules
Subcategory: IGBTs
Technology: Si
Вес, г 30

Техническая документация

Datasheet
pdf, 185 КБ

Дополнительная информация

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