SI3134KE-TP, MOSFET N-CHANNEL MOSFET

SI3134KE-TP, MOSFET N-CHANNEL MOSFET
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Номенклатурный номер: 8005354840
Артикул: SI3134KE-TP

Описание

Semiconductors\Discrete Semiconductors\Transistors\MOSFET
N-Channel MOSFETS Micro Commercial Components (MCC) N-Channel Medium Power and Small Signal MOSFETs have a low on-Resistance (RDS) range of 0.012Ω to 8Ω and a high voltage version of up to 800V. These rugged and reliable MOSFETs are available in a wide range of surface-mount packages, including SOT, DFN, SOP, and Dpak. MCC N-Channel MOSFETs The N-Channel Medium Power and Small Signal MOSFETs have an operating temperature range from -55°C to 150°C or 175°C.

Технические параметры

Brand: Micro Commercial Components(MCC)
Channel Mode: Enhancement
Configuration: Single
Factory Pack Quantity: 3000
Fall Time: 7.4 ns
Forward Transconductance - Min: 1 S
Id - Continuous Drain Current: 750 mA
Manufacturer: Micro Commercial Components(MCC)
Maximum Operating Temperature: +150 C
Minimum Operating Temperature: -55 C
Mounting Style: SMD/SMT
Number of Channels: 1 Channel
Package/Case: SOT-523-3
Pd - Power Dissipation: 150 mW
Product Category: MOSFET
Product Type: MOSFET
Rds On - Drain-Source Resistance: 380 mOhms
Rise Time: 4.8 ns
Subcategory: MOSFETs
Technology: Si
Transistor Polarity: N-Channel
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 17.3 ns
Typical Turn-On Delay Time: 6.7 ns
Vds - Drain-Source Breakdown Voltage: 20 V
Vgs - Gate-Source Voltage: -12 V, +12 V
Vgs th - Gate-Source Threshold Voltage: 1.1 V
Current - Continuous Drain (Id) @ 25В°C 750mA (Tj)
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
ECCN EAR99
FET Type N-Channel
HTSUS 8541.21.0095
Input Capacitance (Ciss) (Max) @ Vds 120pF @ 16V
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Mounting Type Surface Mount
Operating Temperature -55В°C ~ 150В°C (TJ)
Package Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ®
Package / Case SOT-523
Power Dissipation (Max) 150mW (Ta)
Rds On (Max) @ Id, Vgs 380mOhm @ 650mA, 4.5V
RoHS Status ROHS3 Compliant
Supplier Device Package SOT-523
Technology MOSFET (Metal Oxide)
Vgs (Max) В±12V
Vgs(th) (Max) @ Id 1.1V @ 250ВµA
Вес, г 1

Техническая документация

Datasheet
pdf, 965 КБ

Дополнительная информация

Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов