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AFGHL75T65SQDC, IGBT Transistors IGBT with SiC copack diode IGBT - Hybrid IGBT 650 V

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2 970 руб.

от 10 шт. — 2 470 руб.

от 25 шт. — 2 110 руб.

от 100 шт. — 1 754.65 руб.

Добавить в корзину 1 шт. на сумму 2 970 руб.

Номенклатурный номер: 8005368483

Артикул: AFGHL75T65SQDC

Бренд: ON Semiconductor***

Описание

Semiconductors\Discrete Semiconductors\Transistors\IGBT Transistors

AFGHL75T65SQD Field Stop Trench IGBT
onsemi AFGHL75T65SQD Field Stop Trench IGBT offers 4th generation high-speed IGBT technology. The AFGHL75T65SQD is AEC-Q101 qualified and provides the optimum performance for both hard and soft-switching topology in automotive applications. Additionally, the onsemi AFGHL75T65SQD Field Stop Trench IGBT features high current capability, fast switching, and tight parameter distribution.

Технические параметры

Brand:	onsemi
Collector- Emitter Voltage VCEO Max:	650 V
Collector-Emitter Saturation Voltage:	1.6 V
Configuration:	Single
Continuous Collector Current at 25 C:	80 A
Continuous Collector Current Ic Max:	80 A
Factory Pack Quantity: Factory Pack Quantity:	450
Gate-Emitter Leakage Current:	400 nA
Manufacturer:	onsemi
Maximum Gate Emitter Voltage:	-20 V, 20 V
Maximum Operating Temperature:	+175 C
Minimum Operating Temperature:	-55 C
Mounting Style:	Through Hole
Package / Case:	TO-247-3
Packaging:	Tube
Pd - Power Dissipation:	375 W
Product Category:	IGBT Transistors
Product Type:	IGBT Transistors
Subcategory:	IGBTs
Technology:	SiC
Channel Type	N
Maximum Collector Emitter Voltage	650 V
Maximum Continuous Collector Current	75 A
Maximum Gate Emitter Voltage	±20V
Maximum Power Dissipation	375 W
Number of Transistors	1
Package Type	TO-247
Pin Count	3
Transistor Configuration	Single
Вес, г	1