FDMC010N08C, MOSFET PTNG 80/20V IN 51A 10 mOhm
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Описание
Semiconductors\Discrete Semiconductors\Transistors\MOSFET
PowerTrench® MOSFETs onsemi / Fairchild PowerTrench® MOSFETs offer a broad portfolio of MOSFETs in the industry. These MOSFETs offer both N-Channel and P-Channel versions that are optimized for low RDS(ON) switching performance and ruggedness. Typical applications include load switches, primary switching, mobile computing, DC-DC converters, and synchronous rectifiers.
Технические параметры
| Brand: | onsemi |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: | 3000 |
| Fall Time: | 5 ns |
| Forward Transconductance - Min: | 35 S |
| Id - Continuous Drain Current: | 51 A |
| Manufacturer: | onsemi |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | Power-33-8 |
| Pd - Power Dissipation: | 52 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 22 nC |
| Rds On - Drain-Source Resistance: | 10 mOhms |
| Rise Time: | 3 ns |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | N-Channel |
| Typical Turn-Off Delay Time: | 17 ns |
| Typical Turn-On Delay Time: | 9 ns |
| Vds - Drain-Source Breakdown Voltage: | 80 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 2 V |
| Continuous Drain Current (Id) | 11A;51A |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 10mΩ@16A, 10V |
| Drain Source Voltage (Vdss) | 80V |
| Gate Threshold Voltage (Vgs(th)@Id) | 4V@90uA |
| Input Capacitance (Ciss@Vds) | 1.5nF@40V |
| Operating Temperature | -55℃~+150℃@(Tj) |
| Power Dissipation (Pd) | 2.4W;52W |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| Total Gate Charge (Qg@Vgs) | 22nC@10V |
| Type | null |
| Вес, г | 3 |
Техническая документация
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
